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Author : Shantanu Tripathi
Publisher :
ISBN 13 :
Total Pages : 404 pages
Book Rating : 4.90/5 ( download)
Download or read book Tribo-chemical Mechanisms of Copper Chemical Mechanical Planarization (CMP) written by Shantanu Tripathi and published by . This book was released on 2008 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Babu Suryadevara
Publisher : Woodhead Publishing
ISBN 13 : 0128218193
Total Pages : 650 pages
Book Rating : 4.98/5 ( download)
Download or read book Advances in Chemical Mechanical Planarization (CMP) written by Babu Suryadevara and published by Woodhead Publishing. This book was released on 2021-09-10 with total page 650 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Chemical Mechanical Planarization (CMP), Second Edition provides the latest information on a mainstream process that is critical for high-volume, high-yield semiconductor manufacturing, and even more so as device dimensions continue to shrink. The second edition includes the recent advances of CMP and its emerging materials, methods, and applications, including coverage of post-CMP cleaning challenges and tribology of CMP. This important book offers a systematic review of fundamentals and advances in the area. Part one covers CMP of dielectric and metal films, with chapters focusing on the use of current and emerging techniques and processes and on CMP of various materials, including ultra low-k materials and high-mobility channel materials, and ending with a chapter reviewing the environmental impacts of CMP processes. New content addressed includes CMP challenges with tungsten, cobalt, and ruthenium as interconnect and barrier films, consumables for ultralow topography and CMP for memory devices. Part two addresses consumables and process control for improved CMP and includes chapters on CMP pads, diamond disc pad conditioning, the use of FTIR spectroscopy for characterization of surface processes and approaches for defection characterization, mitigation, and reduction. Advances in Chemical Mechanical Planarization (CMP), Second Edition is an invaluable resource and key reference for materials scientists and engineers in academia and R&D. Reviews the most relevant techniques and processes for CMP of dielectric and metal films Includes chapters devoted to CMP for current and emerging materials Addresses consumables and process control for improved CMP, including post-CMP
Author : Seungchoun Choi
Publisher :
ISBN 13 :
Total Pages : 166 pages
Book Rating : 4.74/5 ( download)
Download or read book Physicochemical Modeling of Copper Chemical Mechanical Planarization (CMP) Considering Synergies in Removal Materials written by Seungchoun Choi and published by . This book was released on 2013 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt: With stringent requirements of copper chemical mechanical planarization (CMP), such as minimized step heights, enhanced uniformity and minimal defects, the CMP process needs to be improved based on a fundamental understanding of the material removal mechanisms. Also, with the stringent requirements, the problems in copper CMP process cannot be resolved solely improving the process itself; rather, systemic understanding of the entire manufacturing processes is necessary, demanding a robust copper CMP model to be implemented to design for manufacturing (DfM) tools. Previous models heavily relied on Preston's equation (), which needs to be calibrated for every new set of processing parameters, slowing down the process development. Previous models focused on limited interactions of the consumables and the workpiece during copper CMP, being insufficient at capturing the synergies between chemical and mechanical aspects of copper CMP. Therefore, a quantitative and physicochemical model of copper CMP that predicts material removal rate (MRR) was proposed while focusing on the interplay of consumables and copper and the synergies between chemical and mechanical aspects of the process. While considering the synergies, two mechanisms of the material removal during copper CMP were suggested: chemically dominant and mechanically dominant mechanisms. The total MRR during copper CMP was determined by summing those two contributions. The chemically dominant mechanism attributed the material removal during copper CMP to the removal of the protective material formed on the surface of copper and to the chemical dissolution of copper from the surface both at regions occupied and not occupied by the protective material with different rates. The kinetics of the formation of the protective material at the millisecond scale were studied through electrochemical experiments and theoretical analysis where a governing equation for the adsorption of benzotriazole (BTA) was constructed and solved. It was found that the grown protective material (CuBTA) during copper CMP was only a fraction of a monolayer partly occupying the surface of a wafer. This was because the time allowed for the adsorption of BTA on the surface of copper was limited by the time between consecutive asperity and copper interactions, which was only of the order of one millisecond. The formation and the removal of the protective material were assumed to be balanced during CMP, yielding a constant chemically dominant MRR. The removal of the protective material by abrasion with abrasive particles was investigated by in situ electrochemical measurement during polishing. The removal efficiency of a pad asperity where abrasive particles are embedded was evaluated from the measurements and was compared with the theoretical analysis. It showed a good agreement and suggested that the copper during CMP is mostly deformed elastically by the abrasive particles. The influence of the concentration of copper ions on the kinetics of the formation of the protective material was also investigated using potential-step chronoamperometry using two types of copper microelectrode, namely a three dimensional and a planar electrode. The amount of copper ion may easily build up to a level that exceeds the solubility product of Cu(II)BTA2. Under these conditions, Cu(II)BTA2 can nucleate, consuming the protective material formed on the surface of copper. This phenomenon is highly undesirable as it increases the dissolution rates at the regions where the protective material is removed, worsening the topography after copper CMP. The mechanically dominant MRR was determined from the volume of a wafer that is plastically deformed by indentation of abrasives that are squeezed between pad asperities and the wafer. The shear stress induced in copper by the force applied on an abrasive is lower than the ideal shear strength of copper, which is the relevant property for plasticity at this length scale. However, the crystallographic defects in the copper crystal may reduce the hardness of the material, allowing the material to be plastically deformed. Especially the roughness of the surface induced by chemical additives in the slurry greatly reduces the resistance to plastic deformation of copper. Because of the localized spatial distribution of those crystallographic defects the plastic deformation occurs only locally. Also, only a part of the plastically deformed material will be detached from the surface, contributing to the MRR. While applying this mechanism, the discrepancy of the MRR behavior with varying size and concentration of abrasives between the prediction and the experimental observations was resolved by proposing a new mechanism that determines the number of abrasives participating in the abrasion of the material. The transport mechanisms of abrasive particles toward a wafer and the electrostatic interactions between abrasives were considered to affect the number of abrasive particles deposited on the surface of a wafer. If the deposition of abrasives on the surface of a wafer is limited by the diffusion of abrasives, the MRR decreases with the size of the abrasives. In contrast, the MRR increases with the size of abrasives if the deposition of the abrasives is limited by the jamming limit of the deposited abrasives at the surface of the wafer. Also, micrometer sized abrasives increases the MRR when the size is increased because the deposition of abrasives is limited by the interception mechanism of the abrasives. The proposed model successfully captured the synergies between chemical and mechanical aspects and quantitatively predicted the MRR during copper CMP. In the future, the model will be applied to predict the pattern dependent variability of topography of a wafer after CMP. The proposed model quantitatively predicts the local MRR of copper. Along with a robust model for dielectric and barrier materials, the model can predict the topography after CMP, contributing to the optimization of the CMP process.
Author : Milind Sudhakar Kulkarni
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.99/5 ( download)
Download or read book Tribochemical Investigation of Microelectronic Materials written by Milind Sudhakar Kulkarni and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: To achieve efficient planarization with reduced device dimensions in integrated circuits, a better understanding of the physics, chemistry, and the complex interplay involved in chemical mechanical planarization (CMP) is needed. The CMP process takes place at the interface of the pad and wafer in the presence of the fluid slurry medium. The hardness of Cu is significantly less than the slurry abrasive particles which are usually alumina or silica. It has been accepted that a surface layer can protect the Cu surface from scratching during CMP. Four competing mechanisms in materials removal have been reported: the chemical dissolution of Cu, the mechanical removal through slurry abrasives, the formation of thin layer of Cu oxide and the sweeping surface material by slurry flow. Despite the previous investigation of Cu removal, the electrochemical properties of Cu surface layer is yet to be understood. The motivation of this research was to understand the fundamental aspects of removal mechanisms in terms of electrochemical interactions, chemical dissolution, mechanical wear, and factors affecting planarization. Since one of the major requirements in CMP is to have a high surface finish, i.e., low surface roughness, optimization of the surface finish in reference to various parameters was emphasized. Three approaches were used in this research: in situ measurement of material removal, exploration of the electropotential activation and passivation at the copper surface and modeling of the synergistic electrochemical-mechanical interactions on the copper surface. In this research, copper polishing experiments were conducted using a table top tribometer. A potentiostat was coupled with this tribometer. This combination enabled the evaluation of important variables such as applied pressure, polishing speed, slurry chemistry, pH, materials, and applied DC potential. Experiments were designed to understand the combined and individual effect of electrochemical interactions as well as mechanical impact during polishing. Extensive surface characterization was performed with AFM, SEM, TEM and XPS. An innovative method for direct material removal measurement on the nanometer scale was developed and used. Experimental observations were compared with the theoretically calculated material removal rate values. The synergistic effect of all of the components of the process, which result in a better quality surface finish was quantitatively evaluated for the first time. Impressed potential during CMP proved to be a controlling parameter in the material removal mechanism. Using the experimental results, a model was developed, which provided a practical insight into the CMP process. The research is expected to help with electrochemical material removal in copper planarization with low-k dielectrics.
Author : Jie Cheng
Publisher : Springer
ISBN 13 : 9811061653
Total Pages : 148 pages
Book Rating : 4.53/5 ( download)
Download or read book Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect written by Jie Cheng and published by Springer. This book was released on 2017-09-06 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material. Pursuing a systematic approach to resolve the remaining critical issues in the CMP, it first investigates the tribocorrosion properties and the material removal mechanisms of copper (Cu) and Ru in KIO4-based slurry. The thesis subsequently studies Cu/Ru galvanic corrosion from a new micro and in-situ perspective, and on this basis, seeks ways to mitigate corrosion using different slurry additives. The findings presented here constitute a significant advance in fundamental and technical investigations into the CMP, while also laying the groundwork for future research.
Download or read book Copper Surface Chemistry Relevant to Chemical Mechanical Planarization (Cmp). written by and published by . This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Anna Igual Munoz
Publisher : Springer Nature
ISBN 13 : 3030481077
Total Pages : 110 pages
Book Rating : 4.70/5 ( download)
Download or read book Tribocorrosion written by Anna Igual Munoz and published by Springer Nature. This book was released on 2020-06-16 with total page 110 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a toolbox for identifying and addressing tribocorrosion situations from an engineering point of view. It is an accessible and introductory guideline to the emerging and interdisciplinary field of tribocorrosion covering the main concepts of tribology and corrosion. It describes specific tribocorrosion concepts, models and experimental techniques as well as their application to practical situations in which mechanical and chemical phenomena act simultaneously.
Author :
Publisher :
ISBN 13 :
Total Pages : 612 pages
Book Rating : 4.45/5 ( download)
Download or read book Tribological, Kinetic and Thermal Characteristics of Copper Chemical Mechanical Planarization written by and published by . This book was released on 2005 with total page 612 pages. Available in PDF, EPUB and Kindle. Book excerpt: Copper polishing performance depends significantly on the properties of pads, slurries, conditioning, pressure, sliding velocity, slurry flow rate and temperature. A slight variance in each of these parameters will cause significant change in polising results. Various investigations are performed during this study to understand the effect of consumables and other main operating parameters on copper polishing in terms of removal rate, lubrication mechanism, and temperature transients. A modified two-step Langmuir-Hinshelwood removal rate model and a flash heating thermal model are developed to describe the removal mechanism. Results indicate that grain size plays an important role during copper polishing. Smaller grain size may enhance the chemical rate by providing a higher density of favorable reaction sites. However, denser grain boundaries due to smaller grain size may reduce the mechanical rate by increasing the probability of disruption of three body sliding contact. It is found that removal rate increases as slurry flow increases from 60 to 80 cc/min because higher slurry flow rate can provide more reactants to the system. Then removal rate decreases as slurry flow rate is further increased to 140 cc/min, which is due to synergic effects of the wafer temperature, slurry flow and slurry residence time under the wafer. The observed removal rate drop is thought to be due to the change of the wafer temperature at high sliding velocity. Experimental results from eight slurry formulations with various abrasize size and content show that in the case of 13-nm abrasives, the dominant tribological mechanism is that of partial lubrication, while in the case of 35-nm abrasives, the dominant tribological mechanism is that of boundary lubrication. COF values of the slurry with surfactant are generally lower that those of the slurry without surfactant. Logarithmic spiral positive pad, whose spiral groove is at a slight angle to the pad rotation direction, shows the highest average COF. The radial pad results in the smallest average COF. For all types of the grooved pads investigated, CMP is mechanically limited at low pV, and chemically limited at high pV. Non-Prestonian behavior is thought to be due to variations of COF and substrate temperatures. Dual Emission UV Light Enhanced Fluorescence results indicate that during polishing the wafer is tilted towards the center of the pad and that the extent of wafer tilt is a strong function of diamond disc pressure. Increasing the oscillation frequency of the diamond disc or the rotation rate decreases slurry film thickness. Slurry film thickness increases with the slurry flow rate. Also slurry film thickness strongly depends on diamond disc design.
Author : Joseph M. Steigerwald
Publisher : John Wiley & Sons
ISBN 13 : 3527617752
Total Pages : 337 pages
Book Rating : 4.53/5 ( download)
Download or read book Chemical Mechanical Planarization of Microelectronic Materials written by Joseph M. Steigerwald and published by John Wiley & Sons. This book was released on 2008-09-26 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical Mechanical Planarization (CMP) plays an important role in today's microelectronics industry. With its ability to achieve global planarization, its universality (material insensitivity), its applicability to multimaterial surfaces, and its relative cost-effectiveness, CMP is the ideal planarizing medium for the interlayered dielectrics and metal films used in silicon integrated circuit fabrication. But although the past decade has seen unprecedented research and development into CMP, there has been no single-source reference to this rapidly emerging technology-until now. Chemical Mechanical Planarization of Microelectronic Materials provides engineers and scientists working in the microelectronics industry with unified coverage of both the fundamental mechanisms and engineering applications of CMP. Authors Steigerwald, Murarka, and Gutmann-all leading CMP pioneers-provide a historical overview of CMP, explain the various chemical and mechanical concepts involved, describe CMP materials and processes, review the latest scientific data on CMP worldwide, and offer examples of its uses in the microelectronics industry. They provide detailed coverage of the CMP of various materials used in the making of microcircuitry: tungsten, aluminum, copper, polysilicon, and various dielectric materials, including polymers. The concluding chapter describes post-CMP cleaning techniques, and most chapters feature problem sets to assist readers in developing a more practical understanding of CMP. The only comprehensive reference to one of the fastest growing integrated circuit manufacturing technologies, Chemical Mechanical Planarization of Microelectronic Materials is an important resource for research scientists and engineers working in the microelectronics industry. An indispensable resource for scientists and engineers working in the microelectronics industry Chemical Mechanical Planarization of Microelectronic Materials is the only comprehensive single-source reference to one of the fastest growing integrated circuit manufacturing technologies. It provides engineers and scientists who work in the microelectronics industry with unified coverage of both the fundamental mechanisms and engineering applications of CMP, including: * The history of CMP * Chemical and mechanical underpinnings of CMP * CMP materials and processes * Applications of CMP in the microelectronics industry * The CMP of tungsten, aluminum, copper, polysilicon, and various dielectrics, including polymers used in integrated circuit fabrication * Post-CMP cleaning techniques * Chapter-end problem sets are also included to assist readers in developing a practical understanding of CMP.
Author : Upendra Milind Phatak
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.16/5 ( download)
Download or read book Sensor Based Modeling of Chemical Mechanical Planarization (CMP) of Copper for Semiconductor Applications written by Upendra Milind Phatak and published by . This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
