Transport In Metal Oxide Semiconductor Structures

Author : Hamid Bentarzi
Publisher : Springer Science & Business Media
ISBN 13 : 3642163041
Total Pages : 115 pages
Book Rating : 4.43/5 ( download)

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Download or read book Transport in Metal-Oxide-Semiconductor Structures written by Hamid Bentarzi and published by Springer Science & Business Media. This book was released on 2011-01-12 with total page 115 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.

Author : Nini Pryds
Publisher : Elsevier
ISBN 13 : 0081017529
Total Pages : 560 pages
Book Rating : 4.24/5 ( download)

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Download or read book Metal Oxide-Based Thin Film Structures written by Nini Pryds and published by Elsevier. This book was released on 2017-09-07 with total page 560 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal Oxide-Based Thin Film Structures: Formation, Characterization and Application of Interface-Based Phenomena bridges the gap between thin film deposition and device development by exploring the synthesis, properties and applications of thin film interfaces. Part I deals with theoretical and experimental aspects of epitaxial growth, the structure and morphology of oxide-metal interfaces deposited with different deposition techniques and new developments in growth methods. Part II concerns analysis techniques for the electrical, optical, magnetic and structural properties of thin film interfaces. In Part III, the emphasis is on ionic and electronic transport at the interfaces of Metal-oxide thin films. Part IV discusses methods for tailoring metal oxide thin film interfaces for specific applications, including microelectronics, communication, optical electronics, catalysis, and energy generation and conservation. This book is an essential resource for anyone seeking to further their knowledge of metal oxide thin films and interfaces, including scientists and engineers working on electronic devices and energy systems and those engaged in research into electronic materials. Introduces the theoretical and experimental aspects of epitaxial growth for the benefit of readers new to the field Explores state-of-the-art analysis techniques and their application to interface properties in order to give a fuller understanding of the relationship between macroscopic properties and atomic-scale manipulation Discusses techniques for tailoring thin film interfaces for specific applications, including information, electronics and energy technologies, making this book essential reading for materials scientists and engineers alike

Author : S. Hall
Publisher : Springer Science & Business Media
ISBN 13 : 1402063784
Total Pages : 377 pages
Book Rating : 4.87/5 ( download)

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Download or read book Nanoscaled Semiconductor-on-Insulator Structures and Devices written by S. Hall and published by Springer Science & Business Media. This book was released on 2007-07-09 with total page 377 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book offers combined views on silicon-on-insulator (SOI) nanoscaled electronics from experts in the fields of materials science, device physics, electrical characterization and computer simulation. Coverage analyzes prospects of SOI nanoelectronics beyond Moore’s law and explains fundamental limits for CMOS, SOICMOS and single electron technologies.

Author : Keiji Kikkawa
Publisher : World Scientific
ISBN 13 : 9814497584
Total Pages : 214 pages
Book Rating : 4.89/5 ( download)

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Download or read book Physics In The 21st Century - Proceedings Of The 11th Nishinomiya-yukawa Memorial Symposium written by Keiji Kikkawa and published by World Scientific. This book was released on 1997-10-22 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt: Towards the close of the 20th century, the world's leading experts in theoretical and experimental physics review the major developments in their respective research areas, and present the prospects for the coming 21st century. The subjects covered in this volume are field theory, string theory, quantum cosmology, solid state physics, physics of complex systems, high energy physics, quark-gluon plasma, nuclear physics and observational cosmology.

Author : Hideo Hosono
Publisher : John Wiley & Sons
ISBN 13 : 1119715652
Total Pages : 644 pages
Book Rating : 4.58/5 ( download)

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Download or read book Amorphous Oxide Semiconductors written by Hideo Hosono and published by John Wiley & Sons. This book was released on 2022-05-17 with total page 644 pages. Available in PDF, EPUB and Kindle. Book excerpt: AMORPHOUS OXIDE SEMICONDUCTORS A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field In Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory, the Editors deliver a comprehensive account of the current status of—and latest developments in—transparent oxide semiconductor technology. With contributions from leading international researchers and exponents in the field, this edited volume covers physical fundamentals, thin-film transistor applications, processing, circuits and device simulation, display and memory applications, and new materials relevant to amorphous oxide semiconductors. The book makes extensive use of structural diagrams of materials, energy level and energy band diagrams, device structure illustrations, and graphs of device transfer characteristics, photographs and micrographs to help illustrate the concepts discussed within. It also includes: A thorough introduction to amorphous oxide semiconductors, including discussions of commercial demand, common challenges faced during their manufacture, and materials design Comprehensive explorations of the electronic structure of amorphous oxide semiconductors, structural randomness, doping limits, and defects Practical discussions of amorphous oxide semiconductor processing, including oxide materials and interfaces for application and solution-process metal oxide semiconductors for flexible electronics In-depth examinations of thin film transistors (TFTs), including the trade-off relationship between mobility and reliability in oxide TFTs Perfect for practicing scientists, engineers, and device technologists working with transparent semiconductor systems, Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory will also earn a place in the libraries of students studying oxides and other non-classical and innovative semiconductor devices. WILEY SID Series in Display Technology Series Editor: Ian Sage, Abelian Services, Malvern, UK The Society for Information Display (SID) is an international society which has the aim of encouraging the development of all aspects of the field of information display. Complementary to the aims of the society, the Wiley-SID series is intended to explain the latest developments in information display technology at a professional level. The broad scope of the series addresses all facets of information displays from technical aspects through systems and prototypes to standards and ergonomics.

Author : Zhigang Zang
Publisher : John Wiley & Sons
ISBN 13 : 3527352252
Total Pages : 293 pages
Book Rating : 4.58/5 ( download)

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Download or read book Metal Oxide Semiconductors written by Zhigang Zang and published by John Wiley & Sons. This book was released on 2023-12-11 with total page 293 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal Oxide Semiconductors Up-to-date resource highlighting highlights emerging applications of metal oxide semiconductors in various areas and current challenges and directions in commercialization Metal Oxide Semiconductors provides a current understanding of oxide semiconductors, covering fundamentals, synthesizing methods, and applications in diodes, thin-film transistors, gas sensors, solar cells, and more. The text presents state-of-the-art information along with fundamental prerequisites for understanding and discusses the current challenges in pursuing commercialization and future directions of this field. Despite rapid advancements in the materials science and device physics of oxide semiconductors over the past decade, the understanding of science and technology in this field remains incomplete due to its relatively short research history; this book aims to bridge the gap between the rapidly advancing research progress in this field and the demand for relevant materials and devices by researchers, engineers, and students. Written by three highly qualified authors, Metal Oxide Semiconductors discusses sample topics such as: Fabrication techniques and principles, covering vacuum-based methods, including sputtering, atomic layer deposition and evaporation, and solution-based methods Fundamentals, progresses, and potentials of p–n heterojunction diodes, Schottky diodes, metal-insulator-semiconductor diodes, and self-switching diodes Applications in thin-film transistors, detailing the current progresses and challenges towards commercialization for n-type TFTs, p-type TFTs, and circuits Detailed discussions on the working mechanisms and representative devices of oxide-based gas sensors, pressure sensors, and PH sensors Applications in optoelectronics, both in solar cells and ultraviolet photodetectors, covering their parameters, materials, and performance Memory applications, including resistive random-access memory, transistor-structured memory devices, transistor-structured artificial synapse, and optical memory transistors A comprehensive monograph covering all aspects of oxide semiconductors, Metal Oxide Semiconductors is an essential resource for materials scientists, electronics engineers, semiconductor physicists, and professionals in the semiconductor and sensor industries who wish to understand all modern developments that have been made in the field.

Author : Shubham Kumar
Publisher : CRC Press
ISBN 13 : 1000396401
Total Pages : 353 pages
Book Rating : 4.09/5 ( download)

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Download or read book Integrated Circuit Fabrication written by Shubham Kumar and published by CRC Press. This book was released on 2021-04-28 with total page 353 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers theoretical and practical aspects of all major steps in the fabrication sequence. This book can be used conveniently in a semester length course on integrated circuit fabrication. This text can also serve as a reference for practicing engineer and scientist in the semiconductor industry. IC Fabrication are ever demanding of technology in rapidly growing industry growth opportunities are numerous. A recent survey shows that integrated circuit currently outnumber humans in UK, USA, India and China. The spectacular advances in the development and application of integrated circuit technology have led to the emergence of microelectronic process engineering as an independent discipline. Integrated circuit fabrication text books typically divide the fabrication sequence into a number of unit processes that are repeated to form the integrated circuit. The effect is to give the book an analysis flavor: a number of loosely related topics each with its own background material. Note: T& F does not sell or distribute the Hardback in India, Pakistan, Nepal, Bhutan, Bangladesh and Sri Lanka.

Author :
Publisher :
ISBN 13 :
Total Pages : 464 pages
Book Rating : 4.93/5 ( download)

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Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.

Author : Martin S. Seltzer
Publisher : Springer
ISBN 13 :
Total Pages : 640 pages
Book Rating : 4.52/5 ( download)

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Download or read book Defects and Transport in Oxides written by Martin S. Seltzer and published by Springer. This book was released on 1974-10 with total page 640 pages. Available in PDF, EPUB and Kindle. Book excerpt: DEFECTS AND TRANSPORT IN OXIDES is the proceedings of the eighth Battelle Colloquium in the Materials Sciences, held in Columbus and Salt Fork, Ohio, September 17-22, 1973. It took as its theme the relationship between defects and transport of both mass and charge in oxides. Applications of defect-controlled transport to a number of important processes in oxides also were covered. In selecting this topic, the Organizing Committee thought that 1973 was timely to bring together the leading theoretical and experimental researchers in the oxide transport field to review its status in a critical way, and to consider current major research directions and how research in the future might be guided into fruitful areas. The meeting was highlighted by the presentation of several papers which suggest that major advances in our understanding of transport in oxides appear to be imminent. These papers dealt with the results of new theoretical approaches whereby the energies and configurations of defects may be calculated, and with new experimental techniques for indirectly observing these defects, previously thought to be below the limits of experimental resolving power. Other papers, dealing with the application of defect chemistry to technological processes, served to demonstrate the successes and to point out yet unresolved problems associated with ix x PREFACE understanding the chemistry of imperfect crystals.

Author : Nichigai Asoshiētsu
Publisher :
ISBN 13 :
Total Pages : 1272 pages
Book Rating : 4.58/5 ( download)

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Download or read book Journal of Applied Physics & Applied Physics Letters written by Nichigai Asoshiētsu and published by . This book was released on 1974 with total page 1272 pages. Available in PDF, EPUB and Kindle. Book excerpt: