Strain Effect In Semiconductors

Author : Yongke Sun
Publisher : Springer Science & Business Media
ISBN 13 : 1441905529
Total Pages : 353 pages
Book Rating : 4.29/5 ( download)

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Download or read book Strain Effect in Semiconductors written by Yongke Sun and published by Springer Science & Business Media. This book was released on 2009-11-14 with total page 353 pages. Available in PDF, EPUB and Kindle. Book excerpt: Strain Effect in Semiconductors: Theory and Device Applications presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers. Discusses relevant applications of strain while also focusing on the fundamental physics pertaining to bulk, planar, and scaled nano-devices. Hence, this book is relevant for current strained Si logic technology as well as for understanding the physics and scaling for future strained nano-scale devices.

Author : Gennadiĭ Levikovich Bir
Publisher : Halsted Press
ISBN 13 : 9780470073216
Total Pages : 484 pages
Book Rating : 4.17/5 ( download)

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Download or read book Symmetry and Strain-induced Effects in Semiconductors written by Gennadiĭ Levikovich Bir and published by Halsted Press. This book was released on 1974-01-01 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Author : Suman Lata Tripathi
Publisher : John Wiley & Sons
ISBN 13 : 1119755085
Total Pages : 608 pages
Book Rating : 4.81/5 ( download)

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Download or read book Electrical and Electronic Devices, Circuits, and Materials written by Suman Lata Tripathi and published by John Wiley & Sons. This book was released on 2021-03-24 with total page 608 pages. Available in PDF, EPUB and Kindle. Book excerpt: The increasing demand for electronic devices for private and industrial purposes lead designers and researchers to explore new electronic devices and circuits that can perform several tasks efficiently with low IC area and low power consumption. In addition, the increasing demand for portable devices intensifies the call from industry to design sensor elements, an efficient storage cell, and large capacity memory elements. Several industry-related issues have also forced a redesign of basic electronic components for certain specific applications. The researchers, designers, and students working in the area of electronic devices, circuits, and materials sometimesneed standard examples with certain specifications. This breakthrough work presents this knowledge of standard electronic device and circuit design analysis, including advanced technologies and materials. This outstanding new volume presents the basic concepts and fundamentals behind devices, circuits, and systems. It is a valuable reference for the veteran engineer and a learning tool for the student, the practicing engineer, or an engineer from another field crossing over into electrical engineering. It is a must-have for any library.

Author : Chinmay K. Maiti
Publisher : CRC Press
ISBN 13 : 1000404935
Total Pages : 275 pages
Book Rating : 4.37/5 ( download)

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Download or read book Stress and Strain Engineering at Nanoscale in Semiconductor Devices written by Chinmay K. Maiti and published by CRC Press. This book was released on 2021-06-29 with total page 275 pages. Available in PDF, EPUB and Kindle. Book excerpt: Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale. Features Covers stressstrain engineering in semiconductor devices, such as FinFETs and III-V Nitride-based devices Includes comprehensive mobility model for strained substrates in global and local strain techniques and their implementation in device simulations Explains the development of strain/stress relationships and their effects on the band structures of strained substrates Uses design of experiments to find the optimum process conditions Illustrates the use of TCAD for modeling strain-engineered FinFETs for DC and AC performance predictions This book is for graduate students and researchers studying solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices.

Author : Debdeep Jena
Publisher : Springer Science & Business Media
ISBN 13 : 0387368310
Total Pages : 523 pages
Book Rating : 4.13/5 ( download)

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Download or read book Polarization Effects in Semiconductors written by Debdeep Jena and published by Springer Science & Business Media. This book was released on 2008 with total page 523 pages. Available in PDF, EPUB and Kindle. Book excerpt: Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications presents the latest understanding of the solid state physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of wurtzite compound semiconductors, and associated piezo-electric effects in strained thin film heterostructures. These heterostructures are used in wide band gap semiconductor based sensors, in addition to various electronic and opto-electronic semiconductor devices. The book covers the ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, GaN/AlGaN GaAlN/ AlGaInN, and other nitrides, and SiC heterostructures. It discusses the effects of spontaneous and piezoelectric polarization on band diagrams and electronic properties of abrupt and compositionally graded heterostructures, electronic characterization of polarization-induced charge distributions by scanning-probe spectroscopies, and gauge factors and strain effects. In addition, polarization in extended defects, piezo-electric strain/charge engineering, and application to device design and processing are covered. The effects of polarization on the fundamental electron transport properties, and on the basic optical transitions are described. The crucial role of polarization in devices such as high electron mobility transistors (HEMTs) and light-emitting diodes (LEDs) is covered. The chapters are authored by professors and researchers in the fields of physics, applied physics and electrical engineering, who worked for 5 years under the "Polarization Effects in Semiconductors" DOD funded Multi Disciplinary University Research Initiative. This book will be of interest to graduate students and researchers working in the field of wide-bandgap semiconductor physics and their device applications. It will also be useful for practicing engineers in the field of wide-bandgap semiconductor device research and development.

Author : Gennadij Levikovic Bir
Publisher :
ISBN 13 :
Total Pages : 484 pages
Book Rating : 4.42/5 ( download)

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Download or read book Symmetry and Strain-induced Effects in Semiconductors written by Gennadij Levikovic Bir and published by . This book was released on 1974 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Author : Viktor Sverdlov
Publisher : Springer Science & Business Media
ISBN 13 : 3709103827
Total Pages : 260 pages
Book Rating : 4.21/5 ( download)

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Download or read book Strain-Induced Effects in Advanced MOSFETs written by Viktor Sverdlov and published by Springer Science & Business Media. This book was released on 2011-01-06 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.

Author : Yuanyuan Zhou
Publisher : John Wiley & Sons
ISBN 13 : 3527348093
Total Pages : 517 pages
Book Rating : 4.91/5 ( download)

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Download or read book Halide Perovskite Semiconductors written by Yuanyuan Zhou and published by John Wiley & Sons. This book was released on 2024-03-18 with total page 517 pages. Available in PDF, EPUB and Kindle. Book excerpt: Halide Perovskite Semiconductors Enables readers to acquire a systematic and in-depth understanding of various fundamental aspects of halide perovskite semiconductors Halide Perovskite Semiconductors: Structures, Characterization, Properties, and Phenomena covers the most fundamental topics with regards to halide perovskites, including but not limited to crystal/defect theory, crystal chemistry, heterogeneity, grain boundaries, single-crystals/thin-films/nanocrystals synthesis, photophysics, solid-state ionics, spin physics, chemical (in)stability, carrier dynamics, hot carriers, surface and interfaces, lower-dimensional structures, and structural/functional characterizations. Included discussions on the fundamentals of halide perovskites aim to expand the basic science fields of physics, chemistry, and materials science. Edited by two highly qualified researchers, Halide Perovskite Semiconductors includes specific information on: Crystal/defect theory of halide perovskites, crystal chemistry of halide perovskites, and processing and microstructures of halide perovskites Single-crystals of halide perovskites, nanocrystals of halide perovskites, low-dimensional perovskite crystals, and nanoscale heterogeneity of halide perovskites Carrier mobilities and dynamics in halide perovskites, light emission of halide perovskites, photophysics and ultrafast spectroscopy of halide perovskites Hot carriers in halide perovskites, correlating photophysics with microstructures in halide perovskites, chemical stability of halide perovskites, and solid-state ionics of halide perovskites Readers can find solutions to technological issues and challenges based on the fundamental knowledge gained from this book. As such, Halide Perovskite Semiconductors is an essential in-depth treatment of the subject, ideal for solid-state chemists, materials scientists, physical chemists, inorganic chemists, physicists, and semiconductor physicists.

Author :
Publisher : Academic Press
ISBN 13 : 9780080864303
Total Pages : 431 pages
Book Rating : 4.09/5 ( download)

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Download or read book Materials Science and Technology: Strained-Layer Superlattices written by and published by Academic Press. This book was released on 1991-02-20 with total page 431 pages. Available in PDF, EPUB and Kindle. Book excerpt: The following blurb to be used for the AP Report and ATI only as both volumes will not appear together there.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this volume offers a comprehensive discussion of strained-layer superlattices and focuses on fabrication technology and applications of the material. This volume combines with Volume 32, Strained-Layer Superlattices: Physics, in this series to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.****The following previously approved blurb is to be used in all other direct mail and advertising as both volumes will be promoted together.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this two-volume survey offers a comprehensive discussion of the physics of strained-layer superlattices (Volume 32), as well as detailing fabrication technology and applications of the material (Volume 33). Although each volume is edited to stand alone, the two books combine to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.

Author : Colin Wood
Publisher : Springer Science & Business Media
ISBN 13 : 0387683194
Total Pages : 523 pages
Book Rating : 4.95/5 ( download)

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Download or read book Polarization Effects in Semiconductors written by Colin Wood and published by Springer Science & Business Media. This book was released on 2007-10-16 with total page 523 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the latest understanding of the solid physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of hexagonal semiconductors, and the piezo-electric effects in thin film hetero-structures which are used in wide forbidden band gap sensor, electronic and opto-electronic semiconductor devices.