Soi

Author : Kerry Bernstein
Publisher : Springer Science & Business Media
ISBN 13 : 0306470136
Total Pages : 232 pages
Book Rating : 4.34/5 ( download)

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Download or read book SOI Circuit Design Concepts written by Kerry Bernstein and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book first introduces SOI device physics and its fundamental idiosyncrasies. It then walks the reader through realizations of these mechanisms, which are observed in common high-speed microprocessor designs. The book also offers rules of thumb and comparisons to conventional bulk CMOS to guide implementation and describes a number of unique circuit topologies that SOI supports.

Author : James B. Kuo
Publisher : John Wiley & Sons
ISBN 13 : 0471464171
Total Pages : 424 pages
Book Rating : 4.74/5 ( download)

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Download or read book Low-Voltage SOI CMOS VLSI Devices and Circuits written by James B. Kuo and published by John Wiley & Sons. This book was released on 2004-04-05 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: A practical, comprehensive survey of SOI CMOS devices and circuitsfor microelectronics engineers The microelectronics industry is becoming increasingly dependent onSOI CMOS VLSI devices and circuits. This book is the first toaddress this important topic with a practical focus on devices andcircuits. It provides an up-to-date survey of the current knowledgeregarding SOI device behaviors and describes state-of-the-artlow-voltage CMOS VLSI analog and digital circuit techniques. Low-Voltage SOI CMOS VLSI Devices and Circuits covers the entirefield, from basic concepts to the most advanced ideas. Topicsinclude: * SOI device behavior: fundamental and floating body effects, hotcarrier effects, sensitivity, reliability, self-heating, breakdown,ESD, dual-gate devices, accumulation-mode devices, short channeleffects, and narrow channel effects * Low-voltage SOI digital circuits: floating body effects, DRAM,SRAM, static logic, dynamic logic, gate array, CPU, frequencydivider, and DSP * Low-voltage SOI analog circuits: op amps, filters, ADC/DAC,sigma-delta modulators, RF circuits, VCO, mixers, low-noiseamplifiers, and high-temperature circuits With over 300 references to the state of the art and over 300important figures on low-voltage SOI CMOS devices and circuits,this volume serves as an authoritative, reliable resource forengineers designing these circuits in high-tech industries.

Author : Francis Balestra
Publisher : Springer Science & Business Media
ISBN 13 : 9401003394
Total Pages : 349 pages
Book Rating : 4.91/5 ( download)

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Download or read book Progress in SOI Structures and Devices Operating at Extreme Conditions written by Francis Balestra and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 349 pages. Available in PDF, EPUB and Kindle. Book excerpt: A review of the electrical properties, performance and physical mechanisms of the main silicon-on-insulator (SOI) materials and devices. Particular attention is paid to the reliability of SOI structures operating in harsh conditions. The first part of the book deals with material technology and describes the SIMOX and ELTRAN technologies, the smart-cut technique, SiCOI structures and MBE growth. The second part covers reliability of devices operating under extreme conditions, with an examination of low and high temperature operation of deep submicron MOSFETs and novel SOI technologies and circuits, SOI in harsh environments and the properties of the buried oxide. The third part deals with the characterization of advanced SOI materials and devices, covering laser-recrystallized SOI layers, ultrashort SOI MOSFETs and nanostructures, gated diodes and SOI devices produced by a variety of techniques. The last part reviews future prospects for SOI structures, analyzing wafer bonding techniques, applications of oxidized porous silicon, semi-insulating silicon materials, self-organization of silicon dots and wires on SOI and some new physical phenomena.

Author : Andrew Marshall
Publisher : Springer Science & Business Media
ISBN 13 : 0306481618
Total Pages : 410 pages
Book Rating : 4.11/5 ( download)

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Download or read book SOI Design written by Andrew Marshall and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 410 pages. Available in PDF, EPUB and Kindle. Book excerpt: This title introduces state-of-the-art design principles for SOI circuit design, and is primarily concerned with circuit-related issues. It considers SOI material in terms of implementation that is promising or has been used elsewhere in circuit development, with historical perspective where appropriate.

Author : O. Kononchuk
Publisher : Elsevier
ISBN 13 : 0857099256
Total Pages : 503 pages
Book Rating : 4.59/5 ( download)

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Download or read book Silicon-On-Insulator (SOI) Technology written by O. Kononchuk and published by Elsevier. This book was released on 2014-06-19 with total page 503 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-On-Insulator (SOI) Technology: Manufacture and Applications covers SOI transistors and circuits, manufacture, and reliability. The book also looks at applications such as memory, power devices, and photonics. The book is divided into two parts; part one covers SOI materials and manufacture, while part two covers SOI devices and applications. The book begins with chapters that introduce techniques for manufacturing SOI wafer technology, the electrical properties of advanced SOI materials, and modeling short-channel SOI semiconductor transistors. Both partially depleted and fully depleted SOI technologies are considered. Chapters 6 and 7 concern junctionless and fin-on-oxide field effect transistors. The challenges of variability and electrostatic discharge in CMOS devices are also addressed. Part two covers recent and established technologies. These include SOI transistors for radio frequency applications, SOI CMOS circuits for ultralow-power applications, and improving device performance by using 3D integration of SOI integrated circuits. Finally, chapters 13 and 14 consider SOI technology for photonic integrated circuits and for micro-electromechanical systems and nano-electromechanical sensors. The extensive coverage provided by Silicon-On-Insulator (SOI) Technology makes the book a central resource for those working in the semiconductor industry, for circuit design engineers, and for academics. It is also important for electrical engineers in the automotive and consumer electronics sectors. Covers SOI transistors and circuits, as well as manufacturing processes and reliability Looks at applications such as memory, power devices, and photonics

Author : Jean Laconte
Publisher : Springer Science & Business Media
ISBN 13 : 0387288430
Total Pages : 293 pages
Book Rating : 4.37/5 ( download)

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Download or read book Micromachined Thin-Film Sensors for SOI-CMOS Co-Integration written by Jean Laconte and published by Springer Science & Business Media. This book was released on 2006-10-11 with total page 293 pages. Available in PDF, EPUB and Kindle. Book excerpt: Co-integration of sensors with their associated electronics on a single silicon chip may provide many significant benefits regarding performance, reliability, miniaturization and process simplicity without significantly increasing the total cost. Micromachined Thin-Film Sensors for SOI-CMOS Co-integration covers the challenges and interests and demonstrates the successful co-integration of gas-flow sensors on dielectric membrane, with their associated electronics, in CMOS-SOI technology. We firstly investigate the extraction of residual stress in thin layers and in their stacking and the release, in post-processing, of a 1 μm-thick robust and flat dielectric multilayered membrane using Tetramethyl Ammonium Hydroxide (TMAH) silicon micromachining solution. The optimization of its selectivity towards aluminum is largely demonstrated. The second part focuses on sensors design and characteristics. A novel loop-shape polysilicon microheater is designed and built in a CMOS-SOI standard process. High thermal uniformity, low power consumption and high working temperature are confirmed by extensive measurements. The additional gas flow sensing layers are judiciously chosen and implemented. Measurements in the presence of a nitrogen flow and gas reveal fair sensitivity on a large flow velocity range as well as good response to many gases. Finally, MOS transistors suspended on released dielectric membranes are presented and fully characterized as a concluding demonstrator of the co-integration in SOI technology.

Author : Maryline Bawedin
Publisher : Presses univ. de Louvain
ISBN 13 : 9782874630880
Total Pages : 176 pages
Book Rating : 4.88/5 ( download)

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Download or read book Transient Floating-Body Effects for Memory Applications in Fully-Depleted SOI MOSFETs written by Maryline Bawedin and published by Presses univ. de Louvain. This book was released on 2007 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: Memory devices based on floating-body effects (FBE) in Silicon-on-Insulator (SOI) technology are among the most promising candidates for sub-100nm and low power Dynamic Random Access Memory (DRAM). This new type of DRAMs, called Zero-Capacitor RAM (Z-RAM), uses only one transistor in partially-depleted (PD) SOI technology and takes advantage of FBE which have been considered as parasitic phenomena until now. The Z-RAM programming principles are based on the threshold voltage VTH variations induced by the excess or lack of majority carriers in the floating body. In this dissertation, a new floating-body effect, the Transient Floating Body Potential Effect (TFBPE), based on the body majority carriers non-equilibrium and on the dual dynamic gate coupling in standard fully-depleted (FD) SOI MOSFETs is presented for the first time. The TFBPE occurs in a specific gate bias range and can induce strong hysteresis of the gate and drain current characteristics although the FD SOI transistors are usually known to be immune against the FBE and their aftermaths. Adapted from the same physics principles as in the drain current hysteresis, that we called the Meta-Stable Dip (MSD) effect, a new concept of one-transistor capacitor-less memory was also proposed, the Meta-Stable DRAM (MSDRAM) which is dedicated for double-gate operations. All the experimental results and physics interpretations were supported by 2D numerical simulations. A 1D semi-analytical model of the body potential for non-equilibrium states was also proposed. For the first time, this original body-potential model takes into account the majority carriers density variations, i.e., the quasi-Fermi level non-equilibrium versus a transient gate voltage scan in a FD MOS device.

Author : Yasuhisa Omura
Publisher : John Wiley & Sons
ISBN 13 : 1118487931
Total Pages : 294 pages
Book Rating : 4.38/5 ( download)

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Download or read book SOI Lubistors written by Yasuhisa Omura and published by John Wiley & Sons. This book was released on 2013-08-27 with total page 294 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced level consolidation of the technology, physics and design aspects of silicon-on-insulator (SOI) lubistors No comprehensive description of the physics and possible applications of the Lubistor can be found in a single source even though the Lubistor is already being used in SOI LSIs. The book provides, for the first time, a comprehensive understanding of the physics of the Lubistor. The author argues that a clear understanding of the fundamental physics of the pn junction is essential to allowing scientists and engineers to propose new devices. Since 2001 IBM has been applying the Lubistor to commercial SOI LSIs (large scale integrated devices) used in PCs and game machines. It is a key device in that it provides electrostatic protection to the LSIs. The book explains the device modeling for such applications, and covers the recent analog circuit application of the voltage reference circuit. The author also reviews the physics and the modeling of ideal and non-ideal pn junctions through reconsideration of the Shockley’s theory, offering readers an opportunity to study the physics of pn junction. Pn-junction devices are already applied to the optical communication system as the light emitter and the receiver. Alternatively, optical signal modulators are proposed for coupling the Si optical waveguide with the pn-junction injector. The book also explores the photonic crystal physics and device applications of the Lubistor. Advanced level consolidation of the technology, physics and design aspects of silicon-on-insulator (SOI) lubistors Written by the inventor of the Lubistor, this volume describes the technology for readers to understand the physics and applications of the device First book devoted to the Lubistor transistor, presently being utilized in electrostatic discharge (ESD) applications in SOI technology, a growing market for semiconductor devices and advanced technologies Approaches the topic in a systematic manner, from physical theory, through to modelling, and finally circuit applications This is an advanced level book requiring knowledge of electrical and electronics engineering at graduate level. Contents includes: Concept of Ideal pn Junction/Proposal of Lateral, Unidirectional, Bipolar-Type Insulated-Gate Transistor (Lubistor)/ Noise Characteristics and Modeling of Lubistor/Negative Conductance Properties in Extremely Thin SOI Lubistors/ Two-Dimensionally Confined Injection Phenomena at Low Temperatures in Sub-10-nm-Thick SOI Lubistors/ Experimental Study of Two-Dimensional Confinement Effects on Reverse-Biased Current Characteristics of Ultra-Thin SOI Lubistors/ Gate-Controlled Bipolar Action in Ultra-thin Dynamic Threshold SOI MOSFET/Sub-Circuit Models of SOI Lubistors for Electrostatic Discharge Protection Circuit Design and Their Applications/A New Basic Element for Neural Logic Functions and Functionality in Circuit Applications/Possible Implementation of SOI Lubistors into Conventional Logic Circuits/Potentiality of Electro-Optic Modulator Based on SOI Waveguide/Principles of Parameter Extraction/Feasibility of Lubistor-Based Avalanche Photo Transistor

Author : Takayasu Sakurai
Publisher : Springer Science & Business Media
ISBN 13 : 0387292187
Total Pages : 420 pages
Book Rating : 4.82/5 ( download)

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Download or read book Fully-Depleted SOI CMOS Circuits and Technology for Ultralow-Power Applications written by Takayasu Sakurai and published by Springer Science & Business Media. This book was released on 2007-02-01 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fully-depleted SOI CMOS Circuits and Technology for Ultralow-Power Applications addresses the problem of reducing the supply voltage of conventional circuits for ultralow-power operation and explains power-efficient MTCMOS circuit design for FD-SOI devices at a supply voltage of 0.5 V. The topics include the minimum required knowledge of the fabrication of SOI substrates; FD-SOI devices and the latest developments in device and process technologies; and ultralow-voltage circuits, such as digital circuits, analog/RF circuits, and DC-DC converters. Each ultra-low-power technique related to devices and circuits is fully explained using figures to help understanding.

Author : Isabelle Ratié
Publisher : BRILL
ISBN 13 : 900421643X
Total Pages : 810 pages
Book Rating : 4.33/5 ( download)

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Download or read book Le Soi et l’Autre written by Isabelle Ratié and published by BRILL. This book was released on 2011-05-10 with total page 810 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book offers a comprehensive presentation of the Pratyabhijñā philosophy (elaborated in the 10th and 11th centuries by Utpaladeva and Abhinavagupta) by showing how its main concepts arose from the confrontation of Śaiva religious dogmas with Buddhist and Brahmanical systems. Cet ouvrage offre une présentation détaillée de la philosophie de la Pratyabhijñā (élaborée aux 10e-11e siècles par Utpaladeva et Abhinavagupta) et montre comment ses principaux concepts ont émergé d’une confrontation entre les dogmes religieux śivaïtes et les systèmes bouddhiques et brahmaniques.