Silicon Germanium Sige Nanostructures

Author : Y. Shiraki
Publisher : Elsevier
ISBN 13 : 0857091425
Total Pages : 649 pages
Book Rating : 4.20/5 ( download)

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Download or read book Silicon-Germanium (SiGe) Nanostructures written by Y. Shiraki and published by Elsevier. This book was released on 2011-02-26 with total page 649 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices. The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices. With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures. Reviews the materials science of nanostructures and their properties and applications in different electronic devices Assesses the structural properties of SiGe nanostructures, discussing electronic band structures of SiGe alloys Explores the formation of SiGe nanostructuresfeaturing different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition

Author : Jaime Andrés Pérez-Taborda
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.41/5 ( download)

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Download or read book Silicon-Germanium (SiGe) Nanostructures for Thermoelectric Devices: Recent Advances and New Approaches to High Thermoelectric Efficiency written by Jaime Andrés Pérez-Taborda and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon and germanium present distinct and interesting transport properties. However, composites made of silicon-germanium (SiGe) have resulted in a breakthrough in terms of their transport properties. Currently, these alloys are used in different applications, such as microelectronic devices and integrated circuits, photovoltaic cells, and thermoelectric applications. With respect to thermoelectricity, in the last decades, Si0.8Ge0.2 has attracted significant attention as an energy harvesting material, for powering space applications and other industrial applications. This chapter focuses on the recent advances and new approaches in silicon-germanium (Si1−xGex) nanostructures for thermoelectric devices with high thermoelectric efficiency obtained through magnetron sputtering.

Author : Erich Kasper
Publisher : Inst of Engineering & Technology
ISBN 13 : 9780852967836
Total Pages : 358 pages
Book Rating : 4.37/5 ( download)

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Download or read book Properties of Silicon Germanium and SiGe:Carbon written by Erich Kasper and published by Inst of Engineering & Technology. This book was released on 2000 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt: The industrial relevance of SiGe has increased dramatically in the last few years with the manufacture of heterojunction bipolar circuits for the commercial wireless and datacomms markets by IBM and TEMIC. Major high technology companies see the development and use of SiGe as an important part of their strategy, so that there is a strong impetus to improve its characterization and exploitation. This liberally illustrated and fully indexed volume distills in a homogeneous, structured way the expertise of some 40 invited authors to comprehensively review the whole range of properties as well as SiGe; C, self-assembled nanostructures, quantum effects and device trends.

Author : Erich Kasper
Publisher : Inst of Engineering & Technology
ISBN 13 : 9780863415579
Total Pages : 372 pages
Book Rating : 4.71/5 ( download)

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Download or read book Properties of Silicon Germanium and SiGe written by Erich Kasper and published by Inst of Engineering & Technology. This book was released on 1999-12 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: The industrial relevance of SiGe has increased dramatically in the last few years with the manufacture of heterojunction bipolar circuits for the commercial wireless and datacomms markets by IBM and TEMIC, with over 20 companies planning manufacture in the near future. Major high technology companies see the development and use of SiGe as an important part of their strategy, so that there is a strong impetus to improve its characterization and exploitation. This liberally illustrated and fully indexed volume distils in a homogeneous, structured way the expertise of some 40 invited authors to comprehensively review the whole range of properties as well as SiGe: C, self-assembled nanostructures, quantum effects and device trends. The book contains 75% more text than Prof. Kasper's earlier book Properties of strained and relaxed SiGe (INSPEC, IEE, 1995), thoroughly updates its content and adds many new topics.

Author : Leonid Tsybeskov
Publisher : Cambridge University Press
ISBN 13 : 9781107408791
Total Pages : 326 pages
Book Rating : 4.92/5 ( download)

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Download or read book Group IV Semiconductor Nanostructures - 2006: written by Leonid Tsybeskov and published by Cambridge University Press. This book was released on 2014-06-05 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on advances in materials science and device applications of nanostructures composed of Si, Ge, diamond, SiGe and SiCGe. Continuous progress in the development of reproducibly grown quantum dots, wires and wells has produced a new class of functional materials and devices with characteristic dimensions less than 50nm. The broad spectrum of these devices ranges from commercially offered high-mobility transistors using strained Si to exploratory SiGe nanostructures for integrated optical interconnects and THz lasers. This book brings together researchers from chemistry, physics, biology, materials science and engineering to share and discuss both the challenges and progress towards a new generation of Si(SiGe, SiCGe)-based novel functional structures and devices. Topics include: light emission and photonic devices; Ge, SiGe and diamond nanostructures; strains, Si/Ge films and layers and Si nanocrystals.

Author : R. Szweda
Publisher : Elsevier
ISBN 13 : 0080541216
Total Pages : 419 pages
Book Rating : 4.11/5 ( download)

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Download or read book Silicon Germanium Materials and Devices - A Market and Technology Overview to 2006 written by R. Szweda and published by Elsevier. This book was released on 2002-11-26 with total page 419 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first edition of Silicon Germanium Materials & Devices - A Market & Technology Overview to 2006 examines the development of the silicon germanium business over a six-year period 2001 to 2006. It analyses the trends in markets, technologies and industry structure and profiles all the major players. It is specifically aimed at users and manufacturers of substrates, epiwafers, equipment and devices. The analysis includes a competitive assessment of the market of silicon germanium vs. gallium arsenide, indium phosphide vs. other forms of silicon. Silicon Germanium Materials & Devices - A Market & Technology Overview to 2006 is designed to assist with business plans, R&D and manufacturing strategies. It will be an indispensable aid for managers responsible for business development, technology assessment and market research. The report examines the rapid development of silicon germanium from an R&D curiosity to production status. An extensive treatment from materials through processes to devices and applications it encapsulates the entire silicon germanium business of today and assesses future directions. For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.

Author : Jianhong Zhu
Publisher :
ISBN 13 : 9783932749254
Total Pages : 122 pages
Book Rating : 4.51/5 ( download)

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Download or read book Ordering of self-assembled Ge and SiGe nanostructures on vicinal Si surfaces written by Jianhong Zhu and published by . This book was released on 1999 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Author : James L. Truitt
Publisher :
ISBN 13 :
Total Pages : 148 pages
Book Rating : 4.48/5 ( download)

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Download or read book Spin Coherence in Silicon/silicon-germanium Nanostructures written by James L. Truitt and published by . This book was released on 2004 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Author : Yunki Gwak
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.76/5 ( download)

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Download or read book Thermal Transport Measurement of Silicon-germanium Nanowires written by Yunki Gwak and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Thermal properties of one dimensional nanostructures are of interest for thermoelectric energy conversion. Thermoelectric efficiency is related to non dimensional thermoelectric figure of merit, ZT=S^2 o T/k, where S, o, k and T are Seebeck coefficient, electrical conductivity, thermal conductivity and the absolute temperature respectively. These physical properties are interdependent. Therefore, making materials with high ZT is a very challenging task. However, nanoscale materials can overcome some of these limitations. When the size of nanomaterials is comparable to wavelength and mean free path of energy carriers, especially phonons, size effect contributes to the thermal conductivity reduction without bringing about major changes in the electrical conductivity and the Seebeck coefficient. Therefore, the figure of merit ZT can be manipulated. For example, the thermal conductivities of several silicon nanowires were more than two orders of magnitude lower than that of bulk silicon values due to the enhanced boundary scattering. Among the nanoscale semiconductor materials, Silicon-Germanium(SiGe) alloy nanowire is a promising candidate for thermoelectric materials The thermal conductivities of SiGe core-shell nanowires with core diameters of 96nm, 129nm and 177nm were measured using a batch fabricated micro device in a temperature range of 40K-450K. SiGe nanowires used in the experiment were synthesized via the Vapour-Liquid-Solid (VLS) growth method. The thermal conductivity data was compared with thermal conductivity of Si and Ge nanowires. The data was compared with SiGe alloy thin film, bulk SiGe, Si/SixGe1-x superlattice nanowire, Si/Si0.7Ge0.3 superlattice thin film and also with the thermal conductivity of Si0.5Ge0.5 calculated using the Einstein model. The thermal conductivities of these SiGe alloy nanowires observed in this work are ~20 times lower than Si nanowires, ~10 times lower than Ge nanowires, ~3-4 times lower than Si/SixGe1-x superlattice thin film, Si/SixGe1-x superlattice nanowire and about 3 time lower than bulk SiGe alloy. The low values of thermal conductivity are majorly due to the effect of alloy scattering, due to increased boundary scattering as a result of nanoscale diameters, and the interface diffuse scattering by core-shell effect. The influence of core-shell effect, alloy scattering and boundary scattering effect in reducing the thermal conductivity of these nanowires opens up opportunities for tuning thermoelectric properties which can pave way to thermoelectric materials with high figures of merit in the future.

Author : Chinmay K. Maiti
Publisher : CRC Press
ISBN 13 : 1000404935
Total Pages : 275 pages
Book Rating : 4.37/5 ( download)

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Download or read book Stress and Strain Engineering at Nanoscale in Semiconductor Devices written by Chinmay K. Maiti and published by CRC Press. This book was released on 2021-06-29 with total page 275 pages. Available in PDF, EPUB and Kindle. Book excerpt: Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale. Features Covers stressstrain engineering in semiconductor devices, such as FinFETs and III-V Nitride-based devices Includes comprehensive mobility model for strained substrates in global and local strain techniques and their implementation in device simulations Explains the development of strain/stress relationships and their effects on the band structures of strained substrates Uses design of experiments to find the optimum process conditions Illustrates the use of TCAD for modeling strain-engineered FinFETs for DC and AC performance predictions This book is for graduate students and researchers studying solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices.