Rare Earth Doped Semiconductors Ii Volume 422

Author : S. Coffa
Publisher :
ISBN 13 :
Total Pages : 392 pages
Book Rating : 4.12/5 ( download)

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Download or read book Rare-Earth Doped Semiconductors II: Volume 422 written by S. Coffa and published by . This book was released on 1996 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rare-earth doped semiconductors hold great potential for a variety of optoelectronic applications, including lasers, LEDs and optical amplifiers. In fact, the field has grown rapidly over the past several years, with a clear switch in direction. The first book by this name was devoted to rare-earth doped II-VI and III-V semiconductors; more than half of the papers in this new volume are devoted to rare-earth doped silicon. This indicates that rare-earth doping of silicon is now seriously considered as a means to achieve silicon-based optoelectronic devices. In addition, new reports on rare-earth doped III-nitrides are also presented. Researchers from 14 countries come together in the volume to discuss current trends, highlight new developments and identify potential electronic and optoelectronic applications. Topics include: incorporation methods and properties; structural, electrical and optical properties; excitation mechanisms and electroluminescence and integration.

Author :
Publisher :
ISBN 13 :
Total Pages : 40 pages
Book Rating : 4.36/5 ( download)

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Download or read book 岡垣町の農業 written by and published by . This book was released on 1984 with total page 40 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Author : Electrochemical Society. Electronics Division
Publisher : The Electrochemical Society
ISBN 13 : 9781566773690
Total Pages : 380 pages
Book Rating : 4.95/5 ( download)

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Download or read book State-of-the-Art Program on Compound Semiconductors XXXVI and Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors II written by Electrochemical Society. Electronics Division and published by The Electrochemical Society. This book was released on 2002 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Author : Stephen J. Pearton
Publisher : CRC Press
ISBN 13 : 1482298147
Total Pages : 718 pages
Book Rating : 4.47/5 ( download)

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Download or read book GaN and Related Materials II written by Stephen J. Pearton and published by CRC Press. This book was released on 2000-10-31 with total page 718 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first GaN and Related Materials covered topics such as a historical survey of past research, optical electrical and microstructural characterization, theory of defects, bulk crystal growth, and performance of electronic and photonic devices. This new volume updates old research where warranted and explores new areas such as UV detectors, microw

Author : C. R. Abernathy
Publisher : The Electrochemical Society
ISBN 13 : 9781566771870
Total Pages : 310 pages
Book Rating : 4.70/5 ( download)

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Download or read book Proceedings of the Second Symposium on III-V Nitride Materials and Processes written by C. R. Abernathy and published by The Electrochemical Society. This book was released on 1998 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Author :
Publisher : Elsevier
ISBN 13 : 0080548571
Total Pages : 681 pages
Book Rating : 4.79/5 ( download)

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Download or read book Handbook on the Physics and Chemistry of Rare Earths written by and published by Elsevier. This book was released on 2003-06-19 with total page 681 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume of the Handbook illustrates the rich variety of topics covered by rare earth science. Three chapters are devoted to the description of solid state compounds: skutterudites (Chapter 211), rare earth -antimony systems (Chapter 212), and rare earth-manganese perovskites (Chapter 214). Two other reviews deal with solid state properties: one contribution includes information on existing thermodynamic data of lanthanide trihalides (Chapter 213) while the other one describes optical properties of rare earth compounds under pressure (Chapter 217). Finally, two chapters focus on solution chemistry. The state of the art in unraveling solution structure of lanthanide-containing coordination compounds by paramagnetic nuclear magnetic resonance is outlined in Chapter 215. The potential of time-resolved, laser-induced emission spectroscopy for the analysis of lanthanide and actinide solutions is presented and critically discussed in Chapter 216.

Author : H Sakaki
Publisher : CRC Press
ISBN 13 : 1000112330
Total Pages : 919 pages
Book Rating : 4.37/5 ( download)

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Download or read book Compound Semiconductors 1998 written by H Sakaki and published by CRC Press. This book was released on 2021-01-31 with total page 919 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compound Semiconductors 1998 explores research and development in key semiconductor materials and III-V compounds such as gallium arsenide, indium phosphide, gallium nitride, silicon germanium, and silicon carbide. It critically assesses progress in key technologies such as reliability assessment and reports on advances in the use of semiconductors in modern electronic and optoelectronic devices. Coverage in this volume reflects the increased interest and research funding in nitride-based materials; wide band-gap devices; mobile communications, including III-V-based transistors and photonic devices; crystal growth and characterization; and nanoscale phenomena, such as quantum wires, dots, and other low dimensional structures.

Author : S. J. Pearton
Publisher : Cambridge University Press
ISBN 13 : 0080946755
Total Pages : 593 pages
Book Rating : 4.57/5 ( download)

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Download or read book Processing of 'Wide Band Gap Semiconductors written by S. J. Pearton and published by Cambridge University Press. This book was released on 2013-01-15 with total page 593 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide bandgap semiconductors, made from such materials as GaN, SiC, diamond, and ZnSe, are undergoing a strong resurgence in recent years, principally because of their direct bandgaps, which give them a huge advantage over the indirect gap Sic As an example, more than 10 million blue LEDs using this technology are sold each month, and new, high brightness (15 lumens per watt), long-life white LEDs are under development with the potential to replace incandescent bulbs in many situations. This book provides readers with a broad overview of this rapidly expanding technology, bringing them up to speed on new discoveries and commercial applications. It provides specific technical applications of key processes such as laser diodes, LEDs, and very high temperature electronic controls on engines, focusing on doping, etching, oxidation passivation, growth techniques and more.

Author : Jürgen Michel
Publisher :
ISBN 13 :
Total Pages : 744 pages
Book Rating : 4.52/5 ( download)

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Download or read book Defects in Electronic Materials II: Volume 442 written by Jürgen Michel and published by . This book was released on 1997-05-02 with total page 744 pages. Available in PDF, EPUB and Kindle. Book excerpt: The pervasive role of defects in determining the thermal, mechanical, electrical, optical and magnetic properties of materials is significant as is the knowledge and operation of generation and control of defects in electronic materials. Developing novel semiconductor materials, however, requires new insights into the role of defects to achieve new properties. New experimental techniques must be developed to study defects in small structures. Research groups come together in this book from MRS to provide a vivid picture of the current problems, progress and methods in defect studies in electronic materials. Topics include new techniques in defect studies; processing induced defects, plasma-induced point defects; processing induced defects -defects and gate-oxide integrity; point defects and reaction; point defects and interactions in Si; impurity diffusion and hydrogen in Si; dislocations in group IV semiconductors; point defects and defect interactions in SiGe; point defects in III-V compounds; compensation and structural defects in III-V compounds and layers and structures.

Author : H. Q. Hou
Publisher : The Electrochemical Society
ISBN 13 : 9781566771948
Total Pages : 664 pages
Book Rating : 4.43/5 ( download)

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Download or read book Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors written by H. Q. Hou and published by The Electrochemical Society. This book was released on 1998 with total page 664 pages. Available in PDF, EPUB and Kindle. Book excerpt: