Qualitative Analysis Of Hydrodynamical Models Of Charge Transport In Semiconductors

Author : Aleksandr Mikhaĭlovich Blokhin
Publisher :
ISBN 13 : 9781617617911
Total Pages : 0 pages
Book Rating : 4.11/5 ( download)

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Download or read book Qualitative Analysis of Hydrodynamical Models of Charge Transport in Semiconductors written by Aleksandr Mikhaĭlovich Blokhin and published by . This book was released on 2011 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: For the last decades mathematical simulation of physical phenomena in semiconductor devices becomes an actual and rapidly developing area of applied mathematics. Progress in microelectronic technologies enables constructing semiconductor devices of extremely small size such that simplified analytic models can hardly be used for analysis and design of modern semiconductor devices. The reason is that traditional simplifying assumptions which form the background of such models may be essentially broken in modern components of integral schemes. This book discusses the dynamics in this process.

Author : Aleksandr Mikhaĭlovich Blokhin
Publisher :
ISBN 13 : 9781611222166
Total Pages : 181 pages
Book Rating : 4.68/5 ( download)

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Download or read book Qualitative Analysis of Hydrodynamical Models of Charge Transport in Semiconductors written by Aleksandr Mikhaĭlovich Blokhin and published by . This book was released on 2011 with total page 181 pages. Available in PDF, EPUB and Kindle. Book excerpt: For the last decades mathematical simulation of physical phenomena in semiconductor devices becomes an actual and rapidly developing area of applied mathematics. Progress in microelectronic technologies enables constructing semiconductor devices of extremely small size such that simplified analytic models can hardly be used for analysis and design of modern semiconductor devices. The reason is that traditional simplifying assumptions which form the background of such models may be essentially broken in modern components of integral schemes. This book discusses the dynamics in this process. (Imprint: Nova)

Author : Amal Banerjee
Publisher : Springer Nature
ISBN 13 : 3031457501
Total Pages : 305 pages
Book Rating : 4.00/5 ( download)

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Download or read book Semiconductor Devices written by Amal Banerjee and published by Springer Nature. This book was released on 2023-10-16 with total page 305 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book examines in detail how a semiconductor device is designed and fabricated to satisfy best the requirements of the target application. The author presents and explains both basic and state-of-art semiconductor industry standards used in large/small signal equivalent circuit models for semiconductor devices that electronics engineers routinely use in their design calculations. The presentation includes detailed, step-by-step information on how a semiconductor device is fabricated, and the very sophisticated supporting technologies used in the process flow. The author also explains how standard laboratory equipment can be used to extract useful performance metrics of a semiconductor device.

Author : A. M. Blochin
Publisher :
ISBN 13 :
Total Pages : 52 pages
Book Rating : 4.78/5 ( download)

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Download or read book Numerical Investigation of the Hydrodynamic Model Equations for Charge Transport in Semiconductors written by A. M. Blochin and published by . This book was released on 1996 with total page 52 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Author : Riccardo Sacco
Publisher : Academic Press
ISBN 13 : 0128125195
Total Pages : 854 pages
Book Rating : 4.99/5 ( download)

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Download or read book A Comprehensive Physically Based Approach to Modeling in Bioengineering and Life Sciences written by Riccardo Sacco and published by Academic Press. This book was released on 2019-07-18 with total page 854 pages. Available in PDF, EPUB and Kindle. Book excerpt: A Comprehensive Physically Based Approach to Modeling in Bioengineering and Life Sciences provides a systematic methodology to the formulation of problems in biomedical engineering and the life sciences through the adoption of mathematical models based on physical principles, such as the conservation of mass, electric charge, momentum, and energy. It then teaches how to translate the mathematical formulation into a numerical algorithm that is implementable on a computer. The book employs computational models as synthesized tools for the investigation, quantification, verification, and comparison of different conjectures or scenarios of the behavior of a given compartment of the human body under physiological and pathological conditions. Presents theoretical (modeling), biological (experimental), and computational (simulation) perspectives Features examples, exercises, and MATLAB codes for further reader involvement Covers basic and advanced functional and computational techniques throughout the book

Author : Javier Dacuña Santos
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.23/5 ( download)

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Download or read book Quantitative Modeling of Charge Transport in Organic Semiconductor Devices written by Javier Dacuña Santos and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Organic semiconductors have attracted significant interest in recent years for applications in low-cost and large area electronics; for example, flexible displays and solid state lighting, photovoltaics, biosensors, disposable electronics, and low cost RFID tags. Their unique properties make them compatible with high throughput roll-to-roll printing and low temperature deposition, thus allowing the utilization of inexpensive and flexible substrates. Although some commercial applications, such as organic light emitting diode displays, already exist; organic semiconductors still need further development. The success of organic semiconductors in commercial applications requires a deeper understanding of the factors limiting or degrading their performance. In particular those creating defects that lead to reduction of mobility or creation of electronic traps. Identifying those traps and linking them to their physical origin is therefore an important step forward in the evolution of organic semiconductors. Modeling electrical characteristics is an interesting technique that can be used to understand how processing parameters or other environmental factors affect material and device performance. However, attention must be paid to assess that the model fully describes measured devices in order to obtain reliable parameters estimations. In this thesis a series of models are described that allow to estimate semiconductor properties, such as mobility and trap density, from electrical measurements of thin film transistors and unipolar diodes. First, the analysis of transfer curves from polymeric transistors is used to understand the effect that regioregularity defects, degree of crystallinity, and angular distribution of crystallites have on the electrical properties of the material. Results indicate that none of them play a significant role on the total concentration of trap states. The model is then extended to study the electrical properties in unipolar diodes, in which current is space-charge limited. This particular geometry requires the model to account for diffusion current, asymmetries in the contacts, and non-homogeneities in the semiconductor; three factors that are typically ignored in the literature. A thorough error analysis allows us to estimate the energy range where the trap distribution can be estimated reliably. Finally, defects are induced in a rubrene single-crystals by means of ultra-violet ozone exposure and X-ray irradiation. The models developed in this work are used to determine how different the energetic and spatial signatures of the induced traps are. Oxygen-related states centered around 0.35 eV and spatially located near the surface of the crystal, are generated after ultra-violet ozone exposure. In addition the mobility in the same region is severely affected. X-ray irradiation, in contrast, generates a much broader distribution of traps, with no preferred energy. Surprisingly, the spatial distribution indicates that, even though X-ray are supposed to be absorbed uniformly through the crystal, the induced defects have a higher concentration near the top and bottom surfaces of the crystal.

Author : G. Ciuprina
Publisher : Springer Science & Business Media
ISBN 13 : 3540719806
Total Pages : 464 pages
Book Rating : 4.09/5 ( download)

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Download or read book Scientific Computing in Electrical Engineering written by G. Ciuprina and published by Springer Science & Business Media. This book was released on 2007-05-30 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a collection of selected papers presented at the last Scientific Computing in Electrical Engineering (SCEE) Conference, held in Sinaia, Romania, in 2006. The series of SCEE conferences aims at addressing mathematical problems which have a relevance to industry, with an emphasis on modeling and numerical simulation of electronic circuits, electromagnetic fields but also coupled problems and general mathematical and computational methods.

Author : Timothy B. Costa
Publisher :
ISBN 13 :
Total Pages : 79 pages
Book Rating : 4.72/5 ( download)

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Download or read book Analysis of Domain Decomposition Methods for the Simulation of Charge Transport in Semiconductor Structures with Heterojunctions written by Timothy B. Costa and published by . This book was released on 2014 with total page 79 pages. Available in PDF, EPUB and Kindle. Book excerpt: Charge transport in a semiconductor structure with heterojunction is described by a multiscale partial differential equation model. This model can be used, e.g., for the design of more efficient solar cells. Phenomena at the heterojunction must be resolved at the angstrom scale while the size of the device is that of microns. The challenge is therefore to account for correct physics and to keep the model computationally tractable. Thus we use an approach introduced by Horio and Yanai in which the physics at the interface is approximated at the device scale, which is handled by tranditional drift diffusion equations, by unusual jump conditions, called thermionic emission equations. In this model the heterojunction region is approximated by an abrupt interface, resulting in a loss of continuity in the primary variables. The thermionic emission equations consist of a nonhomogeneous jump in the electrostatic potential and unusual Robin-like conditions for carrier transport. The data for these jumps is determined from an angstrom scale first principles calculation in the true heterojunction region. The continuum scale model lends itself well to a domain decomposition approach. In this thesis we present iterative substructuring methods developed for the drift diffusion system with thermionic emission transmission conditions and analyze the convergence of these algorithms.

Author : Terry James Bordelon
Publisher :
ISBN 13 :
Total Pages : 250 pages
Book Rating : 4.88/5 ( download)

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Download or read book Evaluation and development of the hydrodynamic transport model for submicron silicon device analysis written by Terry James Bordelon and published by . This book was released on 1992 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Author : Kanokkorn Pimcharoen
Publisher :
ISBN 13 : 9780438752245
Total Pages : 207 pages
Book Rating : 4.44/5 ( download)

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Download or read book Modeling of Charge Injection and Transport in Organic Semiconductors with Applications to Conducting Atomic Force Microscopy written by Kanokkorn Pimcharoen and published by . This book was released on 2018 with total page 207 pages. Available in PDF, EPUB and Kindle. Book excerpt: Charge injection and transport in organic semiconductors are key factors controlling the device performance, and have been intensively investigated by conductive atomic force microscope (c-AFM) experiments in the space-charge-limited current (SCLC) regime. The simplified SCLC theory, despite being widely used to describe the unipolar SCLC, has limitations in explaining the current-voltage responses of c-AFM measurements due to two major reasons. First, the conventional planar model does not include the effect of current spreading commonly found beneath the conducting tip. Secondly, the theory only considers drift transport, and assumes that charge diffusion can be neglected, causing discrepancies in its predictions of transport behaviors that will be discussed thoroughly here. The focus of this thesis is on developing numerical models for hole-only devices with the full description of drift and diffusion transport mechanisms, which is called the drift-diffusion (DD-) SCLC model. The applications of the models in the analysis of c-AFM experimental data are presented. We generalize the theory which takes both drift and diffusion currents into account, leading to more realistic DD-SCLC models for several applications. We then develop numerical approaches that efficiently simulate the hole-only SCLCs for one-, two-, and three- dimensional systems. In the case of fully 3-D calculations, the DD-SCLC model is able to treat inhomogeneous systems including spatially varying trap distributions, nanoscale morphologies, and the tip-plane (c-AFM) geometry. In the theoretical studies, the device simulations elucidate a number of crucial factors that affect the charge transport in the SCLC regime, including charge diffusion, traps, as well as, nanoscale morphology. We introduce the methodology of characterizing the current-voltage responses from c-AFM measurements, which has been used in elucidating the experiments on semiconductor poly(3-hexylthiophene) (P3HT) thin films that develop fibrous morphologies after thermal annealing. We generalize the theory which takes both drift and diffusion currents into account, leading to more realistic DD-SCLC models for several applications. We then develop numerical approaches that efficiently simulate the hole-only SCLCs for one-, two-, and three- dimensional systems. In the case of fully 3-D calculations, the DD-SCLC model is able to treat inhomogeneous systems including spatially varying trap distributions, nanoscale morphologies, and the tip-plane (c-AFM) geometry. In the theoretical studies, the device simulations elucidate a number of crucial factors that affect the charge transport in the SCLC regime, including charge diffusion, traps, as well as, nanoscale morphology. We introduce the methodology of characterizing the current-voltage responses from c-AFM measurements, which has been used in elucidating the experiments on semiconductor poly(3-hexylthiophene) (P3HT) thin films that develop fibrous morphologies after thermal annealing.