Point Defects In Semiconductors I

Author : J. Bourgoin
Publisher : Springer Science & Business Media
ISBN 13 : 3642818323
Total Pages : 314 pages
Book Rating : 4.25/5 ( download)

DOWNLOAD NOW!

Download or read book Point Defects in Semiconductors II written by J. Bourgoin and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt: In introductory solid-state physics texts we are introduced to the concept of a perfect crystalline solid with every atom in its proper place. This is a convenient first step in developing the concept of electronic band struc ture, and from it deducing the general electronic and optical properties of crystalline solids. However, for the student who does not proceed further, such an idealization can be grossly misleading. A perfect crystal does not exist. There are always defects. It was recognized very early in the study of solids that these defects often have a profound effect on the real physical properties of a solid. As a result, a major part of scientific research in solid-state physics has,' from the early studies of "color centers" in alkali halides to the present vigorous investigations of deep levels in semiconductors, been devoted to the study of defects. We now know that in actual fact, most of the interest ing and important properties of solids-electrical, optical, mechanical- are determined not so much by the properties of the perfect crystal as by its im perfections.

Author : Johann-Martin Spaeth
Publisher : Springer Science & Business Media
ISBN 13 : 9783540426950
Total Pages : 508 pages
Book Rating : 4.57/5 ( download)

DOWNLOAD NOW!

Download or read book Point Defects in Semiconductors and Insulators written by Johann-Martin Spaeth and published by Springer Science & Business Media. This book was released on 2003-01-22 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt: The precedent book with the title "Structural Analysis of Point Defects in Solids: An introduction to multiple magnetic resonance spectroscopy" ap peared about 10 years ago. Since then a very active development has oc curred both with respect to the experimental methods and the theoretical interpretation of the experimental results. It would therefore not have been sufficient to simply publish a second edition of the precedent book with cor rections and a few additions. Furthermore the application of the multiple magnetic resonance methods has more and more shifted towards materials science and represents one of the important methods of materials analysis. Multiple magnetic resonances are used less now for "fundamental" studies in solid state physics. Therefore a more "pedestrian" access to the meth ods is called for to help the materials scientist to use them or to appreciate results obtained by using these methods. We have kept the two introduc tory chapters on conventional electron paramagnetic resonance (EPR) of the precedent book which are the base for the multiple resonance methods. The chapter on optical detection of EPR (ODEPR) was supplemented by sections on the structural information one can get from "forbidden" transitions as well as on spatial correlations between defects in the so-called "cross relaxation spectroscopy". High-field ODEPR/ENDOR was also added. The chapter on stationary electron nuclear double resonance (ENDOR) was supplemented by the method of stochastic END OR developed a few years ago in Paderborn which is now also commercially available.

Author : M. Lannoo
Publisher : Springer Science & Business Media
ISBN 13 : 364281574X
Total Pages : 283 pages
Book Rating : 4.44/5 ( download)

DOWNLOAD NOW!

Download or read book Point Defects in Semiconductors I written by M. Lannoo and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 283 pages. Available in PDF, EPUB and Kindle. Book excerpt: From its early beginning before the war, the field of semiconductors has developped as a classical example where the standard approximations of 'band theory' can be safely used to study its interesting electronic properties. Thus in these covalent crystals, the electronic structure is only weakly coupled with the atomic vibrations; one-electron Bloch functions can be used and their energy bands can be accurately computed in the neighborhood of the energy gap between the valence and conduction bands; nand p doping can be obtained by introducing substitutional impurities which only introduce shallow donors and acceptors and can be studied by an effective-mass weak-scattering description. Yet, even at the beginning, it was known from luminescence studies that these simple concepts failed to describe the various 'deep levels' introduced near the middle of the energy gap by strong localized imperfections. These imperfections not only include some interstitial and many substitutional atoms, but also 'broken bonds' associated with surfaces and interfaces, dis location cores and 'vacancies', i.e., vacant iattice sites in the crystal. In all these cases, the electronic structure can be strongly correlated with the details of the atomic structure and the atomic motion. Because these 'deep levels' are strongly localised, electron-electron correlations can also playa significant role, and any weak perturbation treatment from the perfect crystal structure obviously fails. Thus, approximate 'strong coupling' techniques must often be used, in line' with a more chemical de scription of bonding.

Author :
Publisher : Academic Press
ISBN 13 : 0128019409
Total Pages : 458 pages
Book Rating : 4.05/5 ( download)

DOWNLOAD NOW!

Download or read book Defects in Semiconductors written by and published by Academic Press. This book was released on 2015-06-08 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. Expert contributors Reviews of the most important recent literature Clear illustrations A broad view, including examination of defects in different semiconductors

Author : J. Bourgoin
Publisher : Springer
ISBN 13 : 9783540115151
Total Pages : 330 pages
Book Rating : 4.53/5 ( download)

DOWNLOAD NOW!

Download or read book Point Defects in Semiconductors II written by J. Bourgoin and published by Springer. This book was released on 1983-05-01 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt: In introductory solid-state physics texts we are introduced to the concept of a perfect crystalline solid with every atom in its proper place. This is a convenient first step in developing the concept of electronic band struc ture, and from it deducing the general electronic and optical properties of crystalline solids. However, for the student who does not proceed further, such an idealization can be grossly misleading. A perfect crystal does not exist. There are always defects. It was recognized very early in the study of solids that these defects often have a profound effect on the real physical properties of a solid. As a result, a major part of scientific research in solid-state physics has,' from the early studies of "color centers" in alkali halides to the present vigorous investigations of deep levels in semiconductors, been devoted to the study of defects. We now know that in actual fact, most of the interest ing and important properties of solids-electrical, optical, mechanical- are determined not so much by the properties of the perfect crystal as by its im perfections.

Author : Giorgio Benedek
Publisher : Springer Science & Business Media
ISBN 13 : 1468457098
Total Pages : 286 pages
Book Rating : 4.94/5 ( download)

DOWNLOAD NOW!

Download or read book Point and Extended Defects in Semiconductors written by Giorgio Benedek and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: The systematic study of defects in semiconductors began in the early fifties. FrQm that time on many questions about the defect structure and properties have been an swered, but many others are still a matter of investigation and discussion. Moreover, during these years new problems arose in connection with the identification and char acterization of defects, their role in determining transport and optical properties of semiconductor materials and devices, as well as from the technology of the ever in creasing scale of integration. This book presents to the reader a view into both basic concepts of defect physics and recent developments of high resolution experimental techniques. The book does not aim at an exhaustive presentation of modern defect physics; rather it gathers a number of topics which represent the present-time research in this field. The volume collects the contributions to the Advanced Research Workshop "Point, Extended and Surface Defects in Semiconductors" held at the Ettore Majo rana Centre at Erice (Italy) from 2 to 7 November 1988, in the framework of the International School of Materials Science and Technology. The workshop has brought together scientists from thirteen countries. Most participants are currently working on defect problems in either silicon submicron technology or in quantum wells and superlattices, where point defects, dislocations, interfaces and surfaces are closely packed together.

Author : Michel Lannoo
Publisher : Springer
ISBN 13 :
Total Pages : 296 pages
Book Rating : 4.05/5 ( download)

DOWNLOAD NOW!

Download or read book Point Defects in Semiconductors: Theoretical aspects written by Michel Lannoo and published by Springer. This book was released on 1981 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Author : D. B. Holt
Publisher : Cambridge University Press
ISBN 13 : 9781107424142
Total Pages : 0 pages
Book Rating : 4.43/5 ( download)

DOWNLOAD NOW!

Download or read book Extended Defects in Semiconductors written by D. B. Holt and published by Cambridge University Press. This book was released on 2014-08-07 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Covering topics that are especially important in electronic device development, this book surveys the properties, effects, roles and characterization of structurally extended defects in semiconductors. The basic properties of extended defects are outlined, and their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization are discussed. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.

Author : A. M. Stoneham
Publisher : Oxford University Press
ISBN 13 : 9780198507802
Total Pages : 982 pages
Book Rating : 4.01/5 ( download)

DOWNLOAD NOW!

Download or read book Theory of Defects in Solids written by A. M. Stoneham and published by Oxford University Press. This book was released on 2001 with total page 982 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book surveys the theory of defects in solids, concentrating on the electronic structure of point defects in insulators and semiconductors. The relations between different approaches are described, and the predictions of the theory compared critically with experiment. The physical assumptions and approximations are emphasized. The book begins with the perfect solid, then reviews the main methods of calculating defect energy levels and wave functions. The calculation and observable defect properties is discussed, and finally, the theory is applied to a range of defects that are very different in nature. This book is intended for research workers and graduate students interested in solid-state physics. From reviews of the hardback: 'It is unique and of great value to all interested in the basic aspects of defects in solids.' Physics Today 'This is a particularly worthy book, one which has long been needed by the theoretician and experimentalist alike.' Nature

Author : Michel Lannoo
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.54/5 ( download)

DOWNLOAD NOW!

Download or read book Point Defects in Semiconductors written by Michel Lannoo and published by . This book was released on 1981 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: