Point Defects In Semiconductors And Insulators

Author : Johann-Martin Spaeth
Publisher : Springer Science & Business Media
ISBN 13 : 3642556159
Total Pages : 497 pages
Book Rating : 4.59/5 ( download)

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Download or read book Point Defects in Semiconductors and Insulators written by Johann-Martin Spaeth and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 497 pages. Available in PDF, EPUB and Kindle. Book excerpt: The precedent book with the title "Structural Analysis of Point Defects in Solids: An introduction to multiple magnetic resonance spectroscopy" ap peared about 10 years ago. Since then a very active development has oc curred both with respect to the experimental methods and the theoretical interpretation of the experimental results. It would therefore not have been sufficient to simply publish a second edition of the precedent book with cor rections and a few additions. Furthermore the application of the multiple magnetic resonance methods has more and more shifted towards materials science and represents one of the important methods of materials analysis. Multiple magnetic resonances are used less now for "fundamental" studies in solid state physics. Therefore a more "pedestrian" access to the meth ods is called for to help the materials scientist to use them or to appreciate results obtained by using these methods. We have kept the two introduc tory chapters on conventional electron paramagnetic resonance (EPR) of the precedent book which are the base for the multiple resonance methods. The chapter on optical detection of EPR (ODEPR) was supplemented by sections on the structural information one can get from "forbidden" transitions as well as on spatial correlations between defects in the so-called "cross relaxation spectroscopy". High-field ODEPR/ENDOR was also added. The chapter on stationary electron nuclear double resonance (ENDOR) was supplemented by the method of stochastic END OR developed a few years ago in Paderborn which is now also commercially available.

Author : Johann-Martin Spaeth
Publisher : Springer
ISBN 13 : 9783642556166
Total Pages : 492 pages
Book Rating : 4.67/5 ( download)

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Download or read book Point Defects in Semiconductors and Insulators written by Johann-Martin Spaeth and published by Springer. This book was released on 2012-10-15 with total page 492 pages. Available in PDF, EPUB and Kindle. Book excerpt: The precedent book with the title "Structural Analysis of Point Defects in Solids: An introduction to multiple magnetic resonance spectroscopy" ap peared about 10 years ago. Since then a very active development has oc curred both with respect to the experimental methods and the theoretical interpretation of the experimental results. It would therefore not have been sufficient to simply publish a second edition of the precedent book with cor rections and a few additions. Furthermore the application of the multiple magnetic resonance methods has more and more shifted towards materials science and represents one of the important methods of materials analysis. Multiple magnetic resonances are used less now for "fundamental" studies in solid state physics. Therefore a more "pedestrian" access to the meth ods is called for to help the materials scientist to use them or to appreciate results obtained by using these methods. We have kept the two introduc tory chapters on conventional electron paramagnetic resonance (EPR) of the precedent book which are the base for the multiple resonance methods. The chapter on optical detection of EPR (ODEPR) was supplemented by sections on the structural information one can get from "forbidden" transitions as well as on spatial correlations between defects in the so-called "cross relaxation spectroscopy". High-field ODEPR/ENDOR was also added. The chapter on stationary electron nuclear double resonance (ENDOR) was supplemented by the method of stochastic END OR developed a few years ago in Paderborn which is now also commercially available.

Author : Rama Shankar Singh
Publisher :
ISBN 13 :
Total Pages : 157 pages
Book Rating : 4.74/5 ( download)

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Download or read book A Study of Point Defects in Insulators and Semiconductors ... written by Rama Shankar Singh and published by . This book was released on 1971 with total page 157 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Author : Johann-Martin Spaeth
Publisher : Springer Science & Business Media
ISBN 13 : 9783540426950
Total Pages : 508 pages
Book Rating : 4.57/5 ( download)

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Download or read book Point Defects in Semiconductors and Insulators written by Johann-Martin Spaeth and published by Springer Science & Business Media. This book was released on 2003-01-22 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt: The precedent book with the title "Structural Analysis of Point Defects in Solids: An introduction to multiple magnetic resonance spectroscopy" ap peared about 10 years ago. Since then a very active development has oc curred both with respect to the experimental methods and the theoretical interpretation of the experimental results. It would therefore not have been sufficient to simply publish a second edition of the precedent book with cor rections and a few additions. Furthermore the application of the multiple magnetic resonance methods has more and more shifted towards materials science and represents one of the important methods of materials analysis. Multiple magnetic resonances are used less now for "fundamental" studies in solid state physics. Therefore a more "pedestrian" access to the meth ods is called for to help the materials scientist to use them or to appreciate results obtained by using these methods. We have kept the two introduc tory chapters on conventional electron paramagnetic resonance (EPR) of the precedent book which are the base for the multiple resonance methods. The chapter on optical detection of EPR (ODEPR) was supplemented by sections on the structural information one can get from "forbidden" transitions as well as on spatial correlations between defects in the so-called "cross relaxation spectroscopy". High-field ODEPR/ENDOR was also added. The chapter on stationary electron nuclear double resonance (ENDOR) was supplemented by the method of stochastic END OR developed a few years ago in Paderborn which is now also commercially available.

Author : Peter David Townsend
Publisher :
ISBN 13 :
Total Pages : 248 pages
Book Rating : 4.17/5 ( download)

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Download or read book Colour Centres and Imperfections in Insulators and Semiconductors written by Peter David Townsend and published by . This book was released on 1973 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Author : Arthur Marshall Stoneham
Publisher :
ISBN 13 : 9780191709920
Total Pages : pages
Book Rating : 4.21/5 ( download)

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Download or read book Theory of Defects in Solids written by Arthur Marshall Stoneham and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Author : Marshall Stoneham
Publisher : Oxford University Press, USA
ISBN 13 : 9780199532506
Total Pages : 996 pages
Book Rating : 4.08/5 ( download)

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Download or read book Theories of Defects in Solids written by Marshall Stoneham and published by Oxford University Press, USA. This book was released on 2001-02-01 with total page 996 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book surveys the theory of defects in solids, concentrating on the electronic structure of point defects in insulators and semiconductors. The relations between different approaches are described, and the predictions of the theory compared critically with experiment. The physicalassumptions and approximations are emphasized. Theory of Defects in Solids begins with the perfect solid, then reviews the main methods of calculating defect energy levels and wave functions. The calculation of observable defect properties is discussed, and finally, the theory is applied to a range of defects that are very different in nature.This book is intended for research workers and graduate students interested in solid-state physics.

Author : A. M. Stoneham
Publisher : Oxford University Press
ISBN 13 : 9780198507802
Total Pages : 982 pages
Book Rating : 4.01/5 ( download)

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Download or read book Theory of Defects in Solids written by A. M. Stoneham and published by Oxford University Press. This book was released on 2001 with total page 982 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book surveys the theory of defects in solids, concentrating on the electronic structure of point defects in insulators and semiconductors. The relations between different approaches are described, and the predictions of the theory compared critically with experiment. The physical assumptions and approximations are emphasized. The book begins with the perfect solid, then reviews the main methods of calculating defect energy levels and wave functions. The calculation and observable defect properties is discussed, and finally, the theory is applied to a range of defects that are very different in nature. This book is intended for research workers and graduate students interested in solid-state physics. From reviews of the hardback: 'It is unique and of great value to all interested in the basic aspects of defects in solids.' Physics Today 'This is a particularly worthy book, one which has long been needed by the theoretician and experimentalist alike.' Nature

Author : J. Bourgoin
Publisher : Springer Science & Business Media
ISBN 13 : 3642818323
Total Pages : 314 pages
Book Rating : 4.25/5 ( download)

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Download or read book Point Defects in Semiconductors II written by J. Bourgoin and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt: In introductory solid-state physics texts we are introduced to the concept of a perfect crystalline solid with every atom in its proper place. This is a convenient first step in developing the concept of electronic band struc ture, and from it deducing the general electronic and optical properties of crystalline solids. However, for the student who does not proceed further, such an idealization can be grossly misleading. A perfect crystal does not exist. There are always defects. It was recognized very early in the study of solids that these defects often have a profound effect on the real physical properties of a solid. As a result, a major part of scientific research in solid-state physics has,' from the early studies of "color centers" in alkali halides to the present vigorous investigations of deep levels in semiconductors, been devoted to the study of defects. We now know that in actual fact, most of the interest ing and important properties of solids-electrical, optical, mechanical- are determined not so much by the properties of the perfect crystal as by its im perfections.

Author : B. Henderson
Publisher : Springer Science & Business Media
ISBN 13 : 1468428020
Total Pages : 502 pages
Book Rating : 4.25/5 ( download)

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Download or read book Defects and Their Structure in Nonmetallic Solids written by B. Henderson and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 502 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Advanced Study Institute of which this volume is the proceedings was held at the University of Exeter during 24 August to 6 September 1975. There were seventy participants of whom eighteen were lecturers and members of the advisory committee. All NATO countries except Holland, Iceland and Portugal were re presented. In addition a small number of participants came from non-NATO countries Japan, Ireland and Switzerland. An aim of the organising committee was to bring together scientists of wide interests and expertise in the defect structure of insulators and semiconductors. Thus major emphases in the pro gramme concerned the use of spectroscopy and microscopy in revealing the structure of point defects and their aggregates, line defects as well as planar and volume defects. The lectures revealed that in general little is known of the fate of the interstitial in most irradiated solids. Nor are the dynamic properties of defects under stood in sufficient detail that one can state how point defects cluster and eventually become macroscopic defects. Although this book faithfully reproduces the material covered by the invited speakers, it does not really follow the flow of the lectures. This is because it seemed advisable for each lecturer to provide a single self-contained and authoritative manuscript, rather than a series of short articles corresponding to the lectures.