Microwave High Power High Efficiency Gan Amplifiers For Communication

Author : Subhash Chandra Bera
Publisher : Springer Nature
ISBN 13 : 9811962669
Total Pages : 263 pages
Book Rating : 4.60/5 ( download)

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Download or read book Microwave High Power High Efficiency GaN Amplifiers for Communication written by Subhash Chandra Bera and published by Springer Nature. This book was released on 2022-11-29 with total page 263 pages. Available in PDF, EPUB and Kindle. Book excerpt: The textbook discusses design and analysis of microwave high power and high efficiency amplifiers for communications, appropriate for undergraduate, post-graduate students, practical circuit designers and researchers in the field of electronics and communication engineering. This book covers basics of III-V group semiconductor materials and GaAs and GaN based High Electron Mobility Transistors (HEMTs) most suitable for microwave and mm wave power amplifiers required for present wireless communication systems and upcoming 4G and 5G mobile base stations. The book describes design and analysis of classical class of amplifier operations such as Class-A, B, AB, C and F. The coverage extends to advanced classes of amplifier operation such as extended continuous Class-B/Class-J, and extended continuous Class-F operations for broadband, high power and high efficiency performance. Analytical expressions are derived for circuit elements and performance parameters for clear understanding and required for practical design of power amplifiers. Each topic is supplemented with suitable schematic diagrams, analytical expressions and plotted results for clear understanding.

Author :
Publisher :
ISBN 13 : 1839530367
Total Pages : 581 pages
Book Rating : 4.64/5 ( download)

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Download or read book RADIO FREQUENCY AND MICROWAVE POWER AMPLIFIERS written by and published by . This book was released on 2019 with total page 581 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Author : Zhancang Wang
Publisher : Artech House
ISBN 13 : 1630814679
Total Pages : 414 pages
Book Rating : 4.70/5 ( download)

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Download or read book High-Efficiency Load Modulation Power Amplifiers for Wireless Communications written by Zhancang Wang and published by Artech House. This book was released on 2017-06-30 with total page 414 pages. Available in PDF, EPUB and Kindle. Book excerpt: This cutting-edge resource presents a complete and systematic overview of the practical design considerations of radio frequency (RF) high efficiency load modulation power amplifiers (PA) for modern wireless communications for 4G and beyond. It provides comprehensive insight into all aspects of load modulation PA design and optimization not only covering design approaches specifically for passive and active load modulation operation but also hybrid with dynamic supply modulation and digital signal processing algorithms required for performance enhancement. Passive load impedance tuner design, dynamic load modulation PA, active load modulation PA and Doherty PA design for efficiently enhancement are explained. Readers find practical guidance into load modulation PA design for bandwidth extension, including video bandwidth enhancement techniques, broadband dynamic load amplifiers, topology selection, design procedures, and network output. This book presents the evolution and integration of classical load modulation PA topologies in order to meet new challenges in the field.

Author : Andrei Grebennikov
Publisher : Academic Press
ISBN 13 : 0128227540
Total Pages : 840 pages
Book Rating : 4.41/5 ( download)

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Download or read book Switchmode RF and Microwave Power Amplifiers written by Andrei Grebennikov and published by Academic Press. This book was released on 2021-03-19 with total page 840 pages. Available in PDF, EPUB and Kindle. Book excerpt: Switchmode RF and Microwave Power Amplifiers, Third Edition is an essential reference book on developing RF and microwave switchmode power amplifiers. The book combines theoretical discussions with practical examples, allowing readers to design high-efficiency RF and microwave power amplifiers on different types of bipolar and field-effect transistors, design any type of high-efficiency switchmode power amplifiers operating in Class D or E at lower frequencies and in Class E or F and their subclasses at microwave frequencies with specified output power, also providing techniques on how to design multiband and broadband Doherty amplifiers using different bandwidth extension techniques and implementation technologies. This book provides the necessary information to understand the theory and practical implementation of load-network design techniques based on lumped and transmission-line elements. It brings a unique focus on switchmode RF and microwave power amplifiers that are widely used in cellular/wireless, satellite and radar communication systems which offer major power consumption savings. Provides a complete history of high-efficiency Class E and Class F techniques Presents a new chapter on Class E with shunt capacitance and shunt filter to simplify the design of high-efficiency power amplifier with broader frequency bandwidths Covers different Doherty architectures, including integrated and monolithic implementations, which are and will be, used in modern communication systems to save power consumption and to reduce size and costs Includes extended coverage of multiband and broadband Doherty amplifiers with different frequency ranges and output powers using different bandwidth extension techniques Balances theory with practical implementation, avoiding a cookbook approach and enabling engineers to develop better designs, including hybrid, integrated and monolithic implementations

Author : Subhash Bhalla
Publisher : Springer
ISBN 13 : 9811072450
Total Pages : 747 pages
Book Rating : 4.51/5 ( download)

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Download or read book Intelligent Computing and Information and Communication written by Subhash Bhalla and published by Springer. This book was released on 2018-01-19 with total page 747 pages. Available in PDF, EPUB and Kindle. Book excerpt: The volume presents high quality research papers presented at Second International Conference on Information and Communication Technology for Intelligent Systems (ICICC 2017). The conference was held during 2–4 August 2017, Pune, India and organized communally by Dr. Vishwanath Karad MIT World Peace University, Pune, India at MIT College of Engineering, Pune and supported by All India Council for Technical Education (AICTE) and Council of Scientific and Industrial Research (CSIR). The volume contains research papers focused on ICT for intelligent computation, communications and audio, and video data processing.

Author : Paolo Colantonio
Publisher : John Wiley & Sons
ISBN 13 : 9780470746554
Total Pages : 514 pages
Book Rating : 4.56/5 ( download)

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Download or read book High Efficiency RF and Microwave Solid State Power Amplifiers written by Paolo Colantonio and published by John Wiley & Sons. This book was released on 2009-07-08 with total page 514 pages. Available in PDF, EPUB and Kindle. Book excerpt: Do you want to know how to design high efficiency RF and microwave solid state power amplifiers? Read this book to learn the main concepts that are fundamental for optimum amplifier design. Practical design techniques are set out, stating the pros and cons for each method presented in this text. In addition to novel theoretical discussion and workable guidelines, you will find helpful running examples and case studies that demonstrate the key issues involved in power amplifier (PA) design flow. Highlights include: Clarification of topics which are often misunderstood and misused, such as bias classes and PA nomenclatures. The consideration of both hybrid and monolithic microwave integrated circuits (MMICs). Discussions of switch-mode and current-mode PA design approaches and an explanation of the differences. Coverage of the linearity issue in PA design at circuit level, with advice on low distortion power stages. Analysis of the hot topic of Doherty amplifier design, plus a description of advanced techniques based on multi-way and multi-stage architecture solutions. High Efficiency RF and Microwave Solid State Power Amplifiers is: an ideal tutorial for MSc and postgraduate students taking courses in microwave electronics and solid state circuit/device design; a useful reference text for practising electronic engineers and researchers in the field of PA design and microwave and RF engineering. With its unique unified vision of solid state amplifiers, you won’t find a more comprehensive publication on the topic.

Author : Nikolai Wolff
Publisher : FBI / Ferdinand Braun Institut
ISBN 13 : 9783736999312
Total Pages : 0 pages
Book Rating : 4.13/5 ( download)

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Download or read book Wideband GaN Microwave Power Amplifiers with Class-G Supply Modulation (Band 48 written by Nikolai Wolff and published by FBI / Ferdinand Braun Institut. This book was released on 2019 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The continuous and rapidly growing demand for mobile communication access led to a major increase in the number of base stations worldwide to provide sufficient coverage and quality of service. As a consequence, mobile communication networks have become a significant contributor to global energy consumption. Several advanced topologies for efficiency improvement of RF power amplifiers have been developed. Modulating the amplifier's supply voltage according to the variation of the envelope signal is one of the most promising concepts. This topology is investigated here, with an architecture that switches the supply voltage of the power amplifier in discrete levels with a class-G supply modulator. The thesis addresses comprehensively all aspects of class-G supply modulation. Several prototype designs were realized to validate the theory and to gain experience on the influence of the corresponding parameters. These include the discrete supply voltage levels, the switching thresholds, and the interface between the RF PA and the class-G supply modulator. Efforts both on improving the RF power amplifiers and developing several class-G supply modulators were also involved. This work covers the progress up to a PA module that provides an instantaneous modulation bandwidth of 120 MHz and achieves better performance than state-of-the art continuous supply modulation systems. Class-G supply modulated RF power amplifiers based on gallium nitride technology exhibit a strong nonlinear behavior, therefore linearization is required. For this purpose, the linearization with digital predistortion based on behavioral models is optimized for the class-G topology and a novel predistorter model is developed and analyzed.

Author : Subhash Chandra Bera
Publisher : Springer
ISBN 13 : 9811330042
Total Pages : 691 pages
Book Rating : 4.49/5 ( download)

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Download or read book Microwave Active Devices and Circuits for Communication written by Subhash Chandra Bera and published by Springer. This book was released on 2018-12-11 with total page 691 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book discusses active devices and circuits for microwave communications. It begins with the basics of device physics and then explores the design of microwave communication systems including analysis and the implementation of different circuits. In addition to classic topics in microwave active devices, such as p-i-n diodes, Schottky diodes, step recovery diodes, BJT, HBT, MESFET, HFET, and various microwave circuits like switch, phase shifter, attenuator, detector, amplifier, multiplier and mixer, the book also covers modern areas such as Class-F power amplifiers, direct frequency modulators, linearizers, and equalizers. Most of the examples are based on practical devices available in commercial markets and the circuits presented are operational. The book uses analytical methods to derive values of circuit components without the need for any circuit design tools, in order to explain the theory of the circuits. All the given analytical expressions are also cross verified using commercially available microwave circuit design tools, and each chapter includes relevant diagrams and solved problems. It is intended for scholars in the field of electronics and communication engineering.

Author : Steven Ross Kurtz
Publisher :
ISBN 13 :
Total Pages : 82 pages
Book Rating : 4.79/5 ( download)

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Download or read book Materials Physics and Device Development for Improved Efficiency of GaN HEMT High Power Amplifiers written by Steven Ross Kurtz and published by . This book was released on 2005 with total page 82 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN-based microwave power amplifiers have been identified as critical components in Sandia's next generation micro-Synthetic-Aperture-Radar (SAR) operating at X-band and Ku-band (10-18 GHz). To miniaturize SAR, GaN-based amplifiers are necessary to replace bulky traveling wave tubes. Specifically, for micro-SAR development, highly reliable GaN high electron mobility transistors (HEMTs), which have delivered a factor of 10 times improvement in power performance compared to GaAs, need to be developed. Despite the great promise of GaN HEMTs, problems associated with nitride materials growth currently limit gain, linearity, power-added-efficiency, reproducibility, and reliability. These material quality issues are primarily due to heteroepitaxial growth of GaN on lattice mismatched substrates. Because SiC provides the best lattice match and thermal conductivity, SiC is currently the substrate of choice for GaN-based microwave amplifiers. Obviously for GaN-based HEMTs to fully realize their tremendous promise, several challenges related to GaN heteroepitaxy on SiC must be solved. For this LDRD, we conducted a concerted effort to resolve materials issues through in-depth research on GaN/AlGaN growth on SiC. Repeatable growth processes were developed which enabled basic studies of these device layers as well as full fabrication of microwave amplifiers. Detailed studies of the GaN and AlGaN growth of SiC were conducted and techniques to measure the structural and electrical properties of the layers were developed. Problems that limit device performance were investigated, including electron traps, dislocations, the quality of semi-insulating GaN, the GaN/AlGaN interface roughness, and surface pinning of the AlGaN gate. Surface charge was reduced by developing silicon nitride passivation. Constant feedback between material properties, physical understanding, and device performance enabled rapid progress which eventually led to the successful fabrication of state of the art HEMT transistors and amplifiers.

Author : Mohammed El Ghzaoui
Publisher : Springer Nature
ISBN 13 : 3031561449
Total Pages : 667 pages
Book Rating : 4.43/5 ( download)

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Download or read book Next Generation Wireless Communication written by Mohammed El Ghzaoui and published by Springer Nature. This book was released on with total page 667 pages. Available in PDF, EPUB and Kindle. Book excerpt: