Ionizing Radiation Effects In Mos Oxides

Author : Timothy R Oldham
Publisher : World Scientific
ISBN 13 : 9814496685
Total Pages : 188 pages
Book Rating : 4.81/5 ( download)

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Download or read book Ionizing Radiation Effects in MOS Oxides written by Timothy R Oldham and published by World Scientific. This book was released on 2000-01-25 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides. The last such guide was Ionizing Radiation Effects in MOS Devices and Circuits, edited by Ma and Dressendorfer and published in 1989. While that book remains an authoritative reference in many areas, there has been a significant amount of more recent work on the nature of the electrically active defects in MOS oxides which are generated by exposure to ionizing radiation. These same defects are also critical in many other areas of oxide reliability research. As a result of this work, the understanding of the basic physical mechanisms has evolved. This book summarizes the new work and integrates it with older work to form a coherent, unified picture. It is aimed primarily at specialists working on radiation effects and oxide reliability. Contents:Introduction (F B McLean)Radiation-Induced Oxide-Trapped Charge (T R Oldham)Radiation-Induced Interface Traps (T R Oldham) Readership: Researchers in physical engineering. keywords:

Author : T. P. Ma
Publisher : John Wiley & Sons
ISBN 13 : 9780471848936
Total Pages : 616 pages
Book Rating : 4.3X/5 ( download)

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Download or read book Ionizing Radiation Effects in MOS Devices and Circuits written by T. P. Ma and published by John Wiley & Sons. This book was released on 1989-04-18 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process-induced radiation effects in the fabrication of high-density circuits. Reviews the history of radiation-hard technology, providing background information for those new to the field. Includes a comprehensive review of the literature and an annotated listing of research activities in radiation-hardness research.

Author : Ronald Donald Schrimpf
Publisher : World Scientific
ISBN 13 : 9812389407
Total Pages : 349 pages
Book Rating : 4.04/5 ( download)

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Download or read book Radiation Effects and Soft Errors in Integrated Circuits and Electronic Devices written by Ronald Donald Schrimpf and published by World Scientific. This book was released on 2004 with total page 349 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide-semiconductor (MOS), and compound semi-conductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level.

Author : Ronald D Schrimpf
Publisher : World Scientific
ISBN 13 : 9814482153
Total Pages : 349 pages
Book Rating : 4.58/5 ( download)

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Download or read book Radiation Effects And Soft Errors In Integrated Circuits And Electronic Devices written by Ronald D Schrimpf and published by World Scientific. This book was released on 2004-07-29 with total page 349 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide-semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level.

Author : J. R. Srour
Publisher : William Andrew
ISBN 13 :
Total Pages : 144 pages
Book Rating : 4.28/5 ( download)

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Download or read book Radiation Effects on and Dose Enhancement written by J. R. Srour and published by William Andrew. This book was released on 1984 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Author : C. Claeys
Publisher : Springer Science & Business Media
ISBN 13 : 3662049740
Total Pages : 424 pages
Book Rating : 4.47/5 ( download)

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Download or read book Radiation Effects in Advanced Semiconductor Materials and Devices written by C. Claeys and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.

Author : Krzysztof Iniewski
Publisher : CRC Press
ISBN 13 : 1351833758
Total Pages : 442 pages
Book Rating : 4.52/5 ( download)

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Download or read book Radiation Effects in Semiconductors written by Krzysztof Iniewski and published by CRC Press. This book was released on 2018-09-03 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt: Space applications, nuclear physics, military operations, medical imaging, and especially electronics (modern silicon processing) are obvious fields in which radiation damage can have serious consequences, i.e., degradation of MOS devices and circuits. Zeroing in on vital aspects of this broad and complex topic, Radiation Effects in Semiconductors addresses the ever-growing need for a clear understanding of radiation effects on semiconductor devices and circuits to combat potential damage it can cause. Features a chapter authored by renowned radiation authority Lawrence T. Clark on Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation This book analyzes the radiation problem, focusing on the most important aspects required for comprehending the degrading effects observed in semiconductor devices, circuits, and systems when they are irradiated. It explores how radiation interacts with solid materials, providing a detailed analysis of three ways this occurs: Photoelectric effect, Compton effect, and creation of electron-positron pairs. The author explains that the probability of these three effects occurring depends on the energy of the incident photon and the atomic number of the target. The book also discusses the effects that photons can have on matter—in terms of ionization effects and nuclear displacement Written for post-graduate researchers, semiconductor engineers, and nuclear and space engineers with some electronics background, this carefully constructed reference explains how ionizing radiation is creating damage in semiconducting devices and circuits and systems—and how that damage can be avoided in areas such as military/space missions, nuclear applications, plasma damage, and X-ray-based techniques. It features top-notch international experts in industry and academia who address emerging detector technologies, circuit design techniques, new materials, and innovative system approaches.

Author : Daniel M. Fleetwood
Publisher : CRC Press
ISBN 13 : 1420043773
Total Pages : 772 pages
Book Rating : 4.78/5 ( download)

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Download or read book Defects in Microelectronic Materials and Devices written by Daniel M. Fleetwood and published by CRC Press. This book was released on 2008-11-19 with total page 772 pages. Available in PDF, EPUB and Kindle. Book excerpt: Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe

Author : Krzysztof Iniewski
Publisher : CRC Press
ISBN 13 : 1439826951
Total Pages : 432 pages
Book Rating : 4.59/5 ( download)

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Download or read book Radiation Effects in Semiconductors written by Krzysztof Iniewski and published by CRC Press. This book was released on 2018-09-03 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: Space applications, nuclear physics, military operations, medical imaging, and especially electronics (modern silicon processing) are obvious fields in which radiation damage can have serious consequences, i.e., degradation of MOS devices and circuits. Zeroing in on vital aspects of this broad and complex topic, Radiation Effects in Semiconductors addresses the ever-growing need for a clear understanding of radiation effects on semiconductor devices and circuits to combat potential damage it can cause. Features a chapter authored by renowned radiation authority Lawrence T. Clark on Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation This book analyzes the radiation problem, focusing on the most important aspects required for comprehending the degrading effects observed in semiconductor devices, circuits, and systems when they are irradiated. It explores how radiation interacts with solid materials, providing a detailed analysis of three ways this occurs: Photoelectric effect, Compton effect, and creation of electron-positron pairs. The author explains that the probability of these three effects occurring depends on the energy of the incident photon and the atomic number of the target. The book also discusses the effects that photons can have on matter—in terms of ionization effects and nuclear displacement Written for post-graduate researchers, semiconductor engineers, and nuclear and space engineers with some electronics background, this carefully constructed reference explains how ionizing radiation is creating damage in semiconducting devices and circuits and systems—and how that damage can be avoided in areas such as military/space missions, nuclear applications, plasma damage, and X-ray-based techniques. It features top-notch international experts in industry and academia who address emerging detector technologies, circuit design techniques, new materials, and innovative system approaches.

Author :
Publisher :
ISBN 13 :
Total Pages : 840 pages
Book Rating : 4.41/5 ( download)

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Download or read book Energy Research Abstracts written by and published by . This book was released on 1990 with total page 840 pages. Available in PDF, EPUB and Kindle. Book excerpt: