GaAs and Related Materials

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Publisher : World Scientific
ISBN 13 : 9789810219253
Total Pages : 700 pages
Book Rating : 4.53/5 ( download)

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Book Synopsis GaAs and Related Materials by : Sadao Adachi

Download or read book GaAs and Related Materials written by Sadao Adachi and published by World Scientific. This book was released on 1994 with total page 700 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the various material properties of bulk GaAs and related materials, and aspects of the physics of artificial semiconductor microstructures, such as quantum wells and superlattices, made of these materials. A complete set of the material properties are considered in this book. They are structural properties; thermal properties; elastic and lattice vibronic properties; collective effects and some response characteristics; electronic energy-band structure and consequences; optical, elasto-optic, and electro-optic properties; and carrier transport properties. This book attempts to summarize, in graphical and tabular forms, most of the important theoretical and experimental results on these material properties. It contains a large number of references useful for further study. Timely topics are discussed as well. This book will be of interest to graduate students, scientists and engineers working on semiconductors.

Materials Aspects of GaAs and InP Based Structures

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Publisher :
ISBN 13 :
Total Pages : 630 pages
Book Rating : 4.09/5 ( download)

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Book Synopsis Materials Aspects of GaAs and InP Based Structures by : V. Swaminathan

Download or read book Materials Aspects of GaAs and InP Based Structures written by V. Swaminathan and published by . This book was released on 1991 with total page 630 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discusses materials aspects of GaAs, InP and related alloys used in the fabricating of photonic and electronic devices. Coverage includes state-of-the-art materials growth and characterization; and physics and chemistry of point defects and dislocations, defects and device reliability.

Fabrication of GaAs Devices

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Publisher : IET
ISBN 13 : 9780863413537
Total Pages : 372 pages
Book Rating : 4.36/5 ( download)

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Book Synopsis Fabrication of GaAs Devices by : Albert G. Baca

Download or read book Fabrication of GaAs Devices written by Albert G. Baca and published by IET. This book was released on 2005-09 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides fundamental and practical information on all aspects of GaAs processing and gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors) and FETs (Field Effect Transistors), how these relate to processing choices, and special processing issues such as wet oxidation, which are especially important in optoelectronic devices. This book is suitable for both new and practising engineers.

GaAs High-Speed Devices

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Publisher : John Wiley & Sons
ISBN 13 : 9780471856412
Total Pages : 632 pages
Book Rating : 4.1X/5 ( download)

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Book Synopsis GaAs High-Speed Devices by : C. Y. Chang

Download or read book GaAs High-Speed Devices written by C. Y. Chang and published by John Wiley & Sons. This book was released on 1994-10-28 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt: The performance of high-speed semiconductor devices—the genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics—is inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed as a novel alternative to silicon, gallium arsenide has swiftly moved into the forefront of the leading high-tech industries as an irreplaceable material in component fabrication. GaAs High-Speed Devices provides a comprehensive, state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possible—as well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to their success. In a clear five-part format, the book systematically examines each of these aspects of GaAs device technology, forming the first authoritative study to consider so many important aspects at once and in such detail. Beginning with chapter 2 of part one, the book discusses such basic subjects as gallium arsenide materials and crystal properties, electron energy band structures, hole and electron transport, crystal growth of GaAs from the melt and defect density analysis. Part two describes the fabrication process of gallium arsenide devices and integrated circuits, shedding light, in chapter 3, on epitaxial growth processes, molecular beam epitaxy, and metal organic chemical vapor deposition techniques. Chapter 4 provides an introduction to wafer cleaning techniques and environment control, wet etching methods and chemicals, and dry etching systems, including reactive ion etching, focused ion beam, and laser assisted methods. Chapter 5 provides a clear overview of photolithography and nonoptical lithography techniques that include electron beam, x-ray, and ion beam lithography systems. The advances in fabrication techniques described in previous chapters necessitate an examination of low-dimension device physics, which is carried on in detail in chapter 6 of part three. Part four includes a discussion of innovative device design and operating principles which deepens and elaborates the ideas introduced in chapter 1. Key areas such as metal-semiconductor contact systems, Schottky Barrier and ohmic contact formation and reliability studies are examined in chapter 7. A detailed discussion of metal semiconductor field-effect transistors, the fabrication technology, and models and parameter extraction for device analyses occurs in chapter 8. The fifth part of the book progresses to an up-to-date discussion of heterostructure field-effect (HEMT in chapter 9), potential-effect (HBT in chapter 10), and quantum-effect devices (chapters 11 and 12), all of which are certain to have a major impact on high-speed integrated circuits and optoelectronic integrated circuit (OEIC) applications. Every facet of GaAs device technology is placed firmly in a historical context, allowing readers to see instantly the significant developmental changes that have shaped it. Featuring a look at devices still under development and device structures not yet found in the literature, GaAs High-Speed Devices also provides a valuable glimpse into the newest innovations at the center of the latest GaAs technology. An essential text for electrical engineers, materials scientists, physicists, and students, GaAs High-Speed Devices offers the first comprehensive and up-to-date look at these formidable 21st century tools. The unique physical and electrical properties of gallium arsenide has revolutionized the hardware essential to digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics. GaAs High-Speed Devices provides the first fully comprehensive look at the enormous range of engineering devices gallium arsenide has made possible as well as the backbone of the technology—ication methods, operating principles, and the materials properties and physics of GaAs—device models and novel device designs. Featuring a clear, six-part format, the book covers: GaAs materials and crystal properties Fabrication processes of GaAs devices and integrated circuits Electron beam, x-ray, and ion beam lithography systems Metal-semiconductor contact systems Heterostructure field-effect, potential-effect, and quantum-effect devices GaAs Microwave Monolithic Integrated Circuits and Digital Integrated Circuits In addition, this comprehensive volume places every facet of the technology in an historical context and gives readers an unusual glimpse at devices still under development and device structures not yet found in the literature.

LT GaAs and Related Compounds

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Publisher :
ISBN 13 :
Total Pages : 460 pages
Book Rating : 4.86/5 ( download)

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Book Synopsis LT GaAs and Related Compounds by : Yawlin Hwang

Download or read book LT GaAs and Related Compounds written by Yawlin Hwang and published by . This book was released on 1992 with total page 460 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Special Issue on Low Temperature Grown GaAs and Related Materials

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Publisher :
ISBN 13 :
Total Pages : 142 pages
Book Rating : 4.22/5 ( download)

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Book Synopsis Special Issue on Low Temperature Grown GaAs and Related Materials by : Gerald L. Witt

Download or read book Special Issue on Low Temperature Grown GaAs and Related Materials written by Gerald L. Witt and published by . This book was released on 1993 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Electrical Characterization of GaAs Materials and Devices

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Publisher : Wiley
ISBN 13 : 9780471935735
Total Pages : 290 pages
Book Rating : 4.35/5 ( download)

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Book Synopsis Electrical Characterization of GaAs Materials and Devices by : David C. Look

Download or read book Electrical Characterization of GaAs Materials and Devices written by David C. Look and published by Wiley. This book was released on 1992-07-14 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt: Summarizes electrical measurement data in GaAs materials and devices, and describes in detail the techniques used to obtain these data and the ideas behind them. Special emphasis is given to subjects sometimes ignored in other works such as impurity and defect Fermi functions, degeneracy factors and multiband conduction, and also to relatively new subjects such as the application of magnetoresistance to determine carrier mobility in device structures. Some of the information is quite practical, e.g., how to make ohmic contacts or where to buy a commercial, automated Hall-effect apparatus. Includes many detailed derivations.

Low Temperature Grown GaAs and Related Materials

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Publisher :
ISBN 13 :
Total Pages : 153 pages
Book Rating : 4.18/5 ( download)

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Book Synopsis Low Temperature Grown GaAs and Related Materials by : David C. Look

Download or read book Low Temperature Grown GaAs and Related Materials written by David C. Look and published by . This book was released on 1993 with total page 153 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Physical Properties of III-V Semiconductor Compounds

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Publisher : John Wiley & Sons
ISBN 13 : 9780471573296
Total Pages : 342 pages
Book Rating : 4.99/5 ( download)

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Book Synopsis Physical Properties of III-V Semiconductor Compounds by : Sadao Adachi

Download or read book Physical Properties of III-V Semiconductor Compounds written by Sadao Adachi and published by John Wiley & Sons. This book was released on 1992-11-10 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of this book is two-fold: to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications. Emphasis is placed on material properties not only of Inp but also of InAs, GaAs and GaP binaries.

GaAs Devices and Circuits

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Publisher : Springer Science & Business Media
ISBN 13 : 1489919899
Total Pages : 677 pages
Book Rating : 4.92/5 ( download)

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Book Synopsis GaAs Devices and Circuits by : Michael S. Shur

Download or read book GaAs Devices and Circuits written by Michael S. Shur and published by Springer Science & Business Media. This book was released on 2013-11-21 with total page 677 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.