FinFET Modeling for IC Simulation and Design

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Author :
Publisher : Academic Press
ISBN 13 : 0124200850
Total Pages : 305 pages
Book Rating : 4.52/5 ( download)

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Book Synopsis FinFET Modeling for IC Simulation and Design by : Yogesh Singh Chauhan

Download or read book FinFET Modeling for IC Simulation and Design written by Yogesh Singh Chauhan and published by Academic Press. This book was released on 2015-03-17 with total page 305 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is the first to explain FinFET modeling for IC simulation and the industry standard – BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture, as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, providing a step-by-step approach for the efficient extraction of model parameters. With this book you will learn: Why you should use FinFET The physics and operation of FinFET Details of the FinFET standard model (BSIM-CMG) Parameter extraction in BSIM-CMG FinFET circuit design and simulation Authored by the lead inventor and developer of FinFET, and developers of the BSIM-CM standard model, providing an experts’ insight into the specifications of the standard The first book on the industry-standard FinFET model - BSIM-CMG

FinFET/GAA Modeling for IC Simulation and Design

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Author :
Publisher : Elsevier
ISBN 13 : 0323958230
Total Pages : 0 pages
Book Rating : 4.33/5 ( download)

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Book Synopsis FinFET/GAA Modeling for IC Simulation and Design by : Yogesh Singh Chauhan

Download or read book FinFET/GAA Modeling for IC Simulation and Design written by Yogesh Singh Chauhan and published by Elsevier. This book was released on 2024-05-31 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: FinFET/GAA Modeling for IC Simulation and Design: Using the BSIM-CMG Standard, Second Edition is the first to book to explain FinFET modeling for IC simulation and the industry standard – BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, thus providing a step-by-step approach for the efficient extraction of model parameters. With this book, users will learn Why you should use FinFET, The physics and operation of FinFET Details of the FinFET standard model (BSIM-CMG), Parameter extraction in BSIM-CMG FinFET circuit design and simulation, and more. Authored by the lead inventor and developer of FinFET and developers of the BSIM-CM standard model, providing an experts’ insight into the specifications of the standard Presents the first book on the industry-standard FinFET model - BSIM-CMG Includes a new chapter that provides a comprehensive introduction to GAA, including motivations, device concepts, structure, fabrication steps, benefits, and the industry standard GAA model Covers the recent developments in the BSIM-CMG model Updates on RF modeling of FinFET using BSIM-CMG model, including parameter extraction

FinFET Modeling for IC Simulation and Design: Using the BSIM-CMG Standard

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Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.57/5 ( download)

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Book Synopsis FinFET Modeling for IC Simulation and Design: Using the BSIM-CMG Standard by :

Download or read book FinFET Modeling for IC Simulation and Design: Using the BSIM-CMG Standard written by and published by . This book was released on with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

BSIM4 and MOSFET Modeling for IC Simulation

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Author :
Publisher : World Scientific
ISBN 13 : 9812568638
Total Pages : 435 pages
Book Rating : 4.32/5 ( download)

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Book Synopsis BSIM4 and MOSFET Modeling for IC Simulation by : Weidong Liu

Download or read book BSIM4 and MOSFET Modeling for IC Simulation written by Weidong Liu and published by World Scientific. This book was released on 2011 with total page 435 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits. Particular emphasis is placed on how the BSIM model evolved into the first ever industry standard SPICE MOSFET model for circuit simulation and CMOS technology development. The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be robust and efficient, turning device physics theory into a production-worthy SPICE simulation model. Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design.

FinFET Devices for VLSI Circuits and Systems

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Author :
Publisher : CRC Press
ISBN 13 : 0429998090
Total Pages : 318 pages
Book Rating : 4.96/5 ( download)

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Book Synopsis FinFET Devices for VLSI Circuits and Systems by : Samar K. Saha

Download or read book FinFET Devices for VLSI Circuits and Systems written by Samar K. Saha and published by CRC Press. This book was released on 2020-07-15 with total page 318 pages. Available in PDF, EPUB and Kindle. Book excerpt: To surmount the continuous scaling challenges of MOSFET devices, FinFETs have emerged as the real alternative for use as the next generation device for IC fabrication technology. The objective of this book is to provide the basic theory and operating principles of FinFET devices and technology, an overview of FinFET device architecture and manufacturing processes, and detailed formulation of FinFET electrostatic and dynamic device characteristics for IC design and manufacturing. Thus, this book caters to practicing engineers transitioning to FinFET technology and prepares the next generation of device engineers and academic experts on mainstream device technology at the nanometer-nodes.

Industry Standard FDSOI Compact Model BSIM-IMG for IC Design

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Author :
Publisher : Woodhead Publishing
ISBN 13 : 0081024029
Total Pages : 258 pages
Book Rating : 4.27/5 ( download)

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Book Synopsis Industry Standard FDSOI Compact Model BSIM-IMG for IC Design by : Chenming Hu

Download or read book Industry Standard FDSOI Compact Model BSIM-IMG for IC Design written by Chenming Hu and published by Woodhead Publishing. This book was released on 2019-05-21 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: Industry Standard FDSOI Compact Model BSIM-IMG for IC Design helps readers develop an understanding of a FDSOI device and its simulation model. It covers the physics and operation of the FDSOI device, explaining not only how FDSOI enables further scaling, but also how it offers unique possibilities in circuits. Following chapters cover the industry standard compact model BSIM-IMG for FDSOI devices. The book addresses core surface-potential calculations and the plethora of real devices and potential effects. Written by the original developers of the industrial standard model, this book is an excellent reference for the new BSIM-IMG compact model for emerging FDSOI technology. The authors include chapters on step-by-step parameters extraction procedure for BSIM-IMG model and rigorous industry grade tests that the BSIM-IMG model has undergone. There is also a chapter on analog and RF circuit design in FDSOI technology using the BSIM-IMG model. Provides a detailed discussion of the BSIM-IMG model and the industry standard simulation model for FDSOI, all presented by the developers of the model Explains the complex operation of the FDSOI device and its use of two independent control inputs Addresses the parameter extraction challenges for those using this model

Mosfet Modeling for VLSI Simulation

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Author :
Publisher : World Scientific
ISBN 13 : 9812707581
Total Pages : 633 pages
Book Rating : 4.81/5 ( download)

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Book Synopsis Mosfet Modeling for VLSI Simulation by : Narain Arora

Download or read book Mosfet Modeling for VLSI Simulation written by Narain Arora and published by World Scientific. This book was released on 2007 with total page 633 pages. Available in PDF, EPUB and Kindle. Book excerpt: A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations. The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.

Compact Modeling

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Author :
Publisher : Springer Science & Business Media
ISBN 13 : 9048186145
Total Pages : 531 pages
Book Rating : 4.43/5 ( download)

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Book Synopsis Compact Modeling by : Gennady Gildenblat

Download or read book Compact Modeling written by Gennady Gildenblat and published by Springer Science & Business Media. This book was released on 2010-06-22 with total page 531 pages. Available in PDF, EPUB and Kindle. Book excerpt: Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.

BSIM-Bulk MOSFET Model for IC Design - Digital, Analog, RF and High-Voltage

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Author :
Publisher : Elsevier
ISBN 13 : 0323856780
Total Pages : 272 pages
Book Rating : 4.82/5 ( download)

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Book Synopsis BSIM-Bulk MOSFET Model for IC Design - Digital, Analog, RF and High-Voltage by : Chenming Hu

Download or read book BSIM-Bulk MOSFET Model for IC Design - Digital, Analog, RF and High-Voltage written by Chenming Hu and published by Elsevier. This book was released on 2023-04-26 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt: BSIM-Bulk MOSFET Model for IC Design - Digital, Analog, RF and High-Voltage provides in-depth knowledge of the internal operation of the model. The authors not only discuss the fundamental core of the model, but also provide details of the recent developments and new real-device effect models. In addition, the book covers the parameter extraction procedures, addressing geometrical scaling, temperatures, and more. There is also a dedicated chapter on extensive quality testing procedures and experimental results. This book discusses every aspect of the model in detail, and hence will be of significant use for the industry and academia. Those working in the semiconductor industry often run into a variety of problems like model non-convergence or non-physical simulation results. This is largely due to a limited understanding of the internal operations of the model as literature and technical manuals are insufficient. This also creates huge difficulty in developing their own IP models. Similarly, circuit designers and researcher across the globe need to know new features available to them so that the circuits can be more efficiently designed. Reviews the latest advances in fabrication methods for metal chalcogenide-based biosensors Discusses the parameters of biosensor devices to aid in materials selection Provides readers with a look at the chemical and physical properties of reactive metals, noble metals, transition metals chalcogenides and their connection to biosensor device performance

Nanowire Field-Effect Transistor (FET).

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Author :
Publisher :
ISBN 13 : 9783039362097
Total Pages : 96 pages
Book Rating : 4.97/5 ( download)

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Book Synopsis Nanowire Field-Effect Transistor (FET). by : Antonio García-Loureiro

Download or read book Nanowire Field-Effect Transistor (FET). written by Antonio García-Loureiro and published by . This book was released on 2021 with total page 96 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the last few years, the leading semiconductor industries have introduced multi-gate non-planar transistors into their core business. These are being applied in memories and in logical integrated circuits to achieve better integration on the chip, increased performance, and reduced energy consumption. Intense research is underway to develop these devices further and to address their limitations, in order to continue transistor scaling while further improving performance. This Special Issue looks at recent developments in the field of nanowire field-effect transistors (NW-FETs), covering different aspects of the technology, physics, and modelling of these nanoscale devices.