Electron Transport In Compound Semiconductors

Author : B.R. Nag
Publisher : Springer Science & Business Media
ISBN 13 : 3642814166
Total Pages : 476 pages
Book Rating : 4.67/5 ( download)

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Download or read book Electron Transport in Compound Semiconductors written by B.R. Nag and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 476 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discovery of new transport phenomena and invention of electron devices through exploitation of these phenomena have caused a great deal of interest in the properties of compound semiconductors in recent years. Extensive re search has been devoted to the accumulation of experimental results, par ticularly about the artificially synthesised compounds. Significant ad vances have also been made in the improvement of the related theory so that the values of the various transport coefficients may be calculated with suf ficient accuracy by taking into account all the complexities of energy band structure and electron scattering mechanisms. Knowledge about these deve lopments may, however, be gathered only from original research contributions, scattered in scientific journals and conference proceedings. Review articles have been published from time to time, but they deal with one particular material or a particular phenomenon and are written at an advanced level. Available text books on semiconductor physics, do not cover the subject in any detail since many of them were written decades ago. There is, there fore, a definite need for a book, giving a comprehensive account of electron transport in compound semiconductors and covering the introductory material as well as the current work. The present book is an attempt to fill this gap in the literature. The first chapter briefly reviews the history of the developement of compound semiconductors and their applications. It is also an introduction to the contents of the book.

Author : Timothy James Maloney
Publisher :
ISBN 13 :
Total Pages : 248 pages
Book Rating : 4.68/5 ( download)

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Download or read book Nonequilibrium Electron Transport in Compound Semiconductors written by Timothy James Maloney and published by . This book was released on 1976 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Author : B. M. Askerov
Publisher : World Scientific
ISBN 13 : 9789810212834
Total Pages : 416 pages
Book Rating : 4.36/5 ( download)

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Download or read book Electron Transport Phenomena in Semiconductors written by B. M. Askerov and published by World Scientific. This book was released on 1994 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first systematic and detailed exposition of the linear theory of the stationary electron transport phenomena in semiconductors. Arbitrary isotropic and anisotropic nonparabolic bands as well as p-Ge-type bands are considered. Phonon drag effect are taken account of in an arbitrary nonquantizing magnetic field. Scattering theory is discussed in detail with account taken of the Bloch wave functions effect. Transport phenomena in the quantizing magnetic field are studied as well as the size effects in thin films. Band structures of the semiconductors and semiconductor compounds of interest are also considered.The main part of the book deals with the three important problems: charge carrier statistics in a semiconductor, classical and quantum theory of the electron transport phenomena. All the theoretical results considered as well as the validity conditions are presented in the form which may be directly used to interpret experimental data.

Author : Massimo V. Fischetti
Publisher : Springer
ISBN 13 : 3319011014
Total Pages : 481 pages
Book Rating : 4.11/5 ( download)

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Download or read book Advanced Physics of Electron Transport in Semiconductors and Nanostructures written by Massimo V. Fischetti and published by Springer. This book was released on 2016-05-20 with total page 481 pages. Available in PDF, EPUB and Kindle. Book excerpt: This textbook is aimed at second-year graduate students in Physics, Electrical Engineering, or Materials Science. It presents a rigorous introduction to electronic transport in solids, especially at the nanometer scale.Understanding electronic transport in solids requires some basic knowledge of Hamiltonian Classical Mechanics, Quantum Mechanics, Condensed Matter Theory, and Statistical Mechanics. Hence, this book discusses those sub-topics which are required to deal with electronic transport in a single, self-contained course. This will be useful for students who intend to work in academia or the nano/ micro-electronics industry.Further topics covered include: the theory of energy bands in crystals, of second quantization and elementary excitations in solids, of the dielectric properties of semiconductors with an emphasis on dielectric screening and coupled interfacial modes, of electron scattering with phonons, plasmons, electrons and photons, of the derivation of transport equations in semiconductors and semiconductor nanostructures somewhat at the quantum level, but mainly at the semi-classical level. The text presents examples relevant to current research, thus not only about Si, but also about III-V compound semiconductors, nanowires, graphene and graphene nanoribbons. In particular, the text gives major emphasis to plane-wave methods applied to the electronic structure of solids, both DFT and empirical pseudopotentials, always paying attention to their effects on electronic transport and its numerical treatment. The core of the text is electronic transport, with ample discussions of the transport equations derived both in the quantum picture (the Liouville-von Neumann equation) and semi-classically (the Boltzmann transport equation, BTE). An advanced chapter, Chapter 18, is strictly related to the ‘tricky’ transition from the time-reversible Liouville-von Neumann equation to the time-irreversible Green’s functions, to the density-matrix formalism and, classically, to the Boltzmann transport equation. Finally, several methods for solving the BTE are also reviewed, including the method of moments, iterative methods, direct matrix inversion, Cellular Automata and Monte Carlo. Four appendices complete the text.

Author : Norman Chihnan Tien
Publisher :
ISBN 13 :
Total Pages : 80 pages
Book Rating : 4.24/5 ( download)

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Download or read book Low Field Electron Transport Calculation for Compound Semiconductors written by Norman Chihnan Tien and published by . This book was released on 1985 with total page 80 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Author : Huanglin
Publisher :
ISBN 13 :
Total Pages : 154 pages
Book Rating : 4.96/5 ( download)

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Download or read book Electron Transport Models for Compound Semiconductor Devices written by Huanglin and published by . This book was released on 1992 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Author : Walid Abdul Hadi
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.54/5 ( download)

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Download or read book The Electron Transport Within the Wide Energy Gap Compound Semiconductors Gallium Nitride and Zinc Oxide written by Walid Abdul Hadi and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Author : John Chilleri
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.10/5 ( download)

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Download or read book Electron Transport Within Compound Semiconductors with an Emphasis on the Cubic Phase of Boron Nitride written by John Chilleri and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: the scattering component due to these defect lines is found to be the dominant mechanism, particularly at low temperatures and doping concentrations. The total mobility being reduced from the order of 1000 cm2/V·s to the order of 100 cm2/V·s. A theoretical limit analysis reveals that the reduction in total mobility can be mitigated by reducing the threading dislocation line density below 107 cm−2, resulting in an expected 0.1% or less loss in total mobility. Finally, we suggest a method by which the uncertainty in the material parameters and the corresponding impact on the total mobility can be analyzed, the preliminary results confirming that the threading dislocation line component is the dominant source of scattering out of the mechanisms considered.

Author : Xiaolin Lei
Publisher : World Scientific
ISBN 13 : 9812819029
Total Pages : 657 pages
Book Rating : 4.24/5 ( download)

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Download or read book Balance Equation Approach to Electron Transport In Semiconductors written by Xiaolin Lei and published by World Scientific. This book was released on 2008 with total page 657 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents a systematic, comprehensive and up-to-date description of the physical basis of the balance equation transport theory and its applications in bulk and low-dimensional semiconductors. The different aspects of the balance equation method, originally proposed by C S Ting and the author of the present book, were reviewed in the volume entitled Physics of Hot Electron Transport in Semiconductors (edited by C S Ting, World Scientific, 1992). Since then, this method has been extensively developed and applied to various new fields, such as transport in nonparabolic systems, spatially nonuniform systems and semiconductor devices, miniband conduction of superlattices, hot-electron magnetotransport, effects of impact ionization in transport, microwave-induced magnetoresistance oscillation, radiation-driven transport and electron cooling, etc. Due to its simplicity and effectiveness, the balance equation approach has become a useful tool to tackle the many transport phenomena in semiconductors, and provides a reliable basis for developing theories, modeling devices and explaining experiments.The book may be used as a textbook by graduate students. It will also benefit researchers in the field by helping them grasp the basic principles and techniques of the method, without having to spend a lot of time digging out the information from widespread literature covering a period of 30 years.

Author : Sandip Tiwari
Publisher : Academic Press
ISBN 13 : 148328929X
Total Pages : 845 pages
Book Rating : 4.98/5 ( download)

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Download or read book Compound Semiconductor Device Physics written by Sandip Tiwari and published by Academic Press. This book was released on 2013-10-22 with total page 845 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those interested in silicon devices. Each chapter ends with exercises that have been designed to reinforce concepts, to complement arguments or derivations, and to emphasize the nature of approximations by critically evaluating realistic conditions. One of the most rigorous treatments of compound semiconductor device physics yet published**Essential reading for a complete understanding of modern devices**Includes chapter-ending exercises to facilitate understanding