Defects In Semiconductors 18

Author : Masashi Suezawa
Publisher : Trans Tech Publications Ltd
ISBN 13 : 303570502X
Total Pages : 2268 pages
Book Rating : 4.27/5 ( download)

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Download or read book Defects in Semiconductors 18 written by Masashi Suezawa and published by Trans Tech Publications Ltd. This book was released on 1995-11-21 with total page 2268 pages. Available in PDF, EPUB and Kindle. Book excerpt: The study of defects in semiconductors has never been independent of the progress in semiconductor technology. With rapid development in semiconductor device technology, novel types of defects as well as very peculiar behavior of defects in semiconductors have been found one after another. New subjects in the basic study of defects have often been arisen from experiences in the practical field. Great progress has also been achieved in device production technology on the basis of the knowledge clarified in the basic field.

Author : M. Suezawa
Publisher : Trans Tech Publications
ISBN 13 :
Total Pages : 608 pages
Book Rating : 4.65/5 ( download)

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Download or read book Defects in Semiconductors Icds-18 written by M. Suezawa and published by Trans Tech Publications. This book was released on 1996 with total page 608 pages. Available in PDF, EPUB and Kindle. Book excerpt: The study of defects in semiconductors has never been independent of the progress in semiconductor technology. With rapid development in semiconductor device technology, novel types of defects as well as very peculiar behavior of defects in semiconductors have been found one after another. New subjects in the basic study of defects have often been arisen from experiences in the practical field. Great progress has also been achieved in device production technology on the basis of the knowledge clarified in the basic field.

Author :
Publisher : Academic Press
ISBN 13 : 0128019409
Total Pages : 458 pages
Book Rating : 4.05/5 ( download)

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Download or read book Defects in Semiconductors written by and published by Academic Press. This book was released on 2015-06-08 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. Expert contributors Reviews of the most important recent literature Clear illustrations A broad view, including examination of defects in different semiconductors

Author : Masashi Suezawa
Publisher :
ISBN 13 :
Total Pages : 666 pages
Book Rating : 4.61/5 ( download)

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Download or read book Proceedings of the 18th International Conference on Defects in Semiconductors written by Masashi Suezawa and published by . This book was released on 1995 with total page 666 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Author : David A. Drabold
Publisher : Springer Science & Business Media
ISBN 13 :
Total Pages : 320 pages
Book Rating : 4.94/5 ( download)

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Download or read book Theory of Defects in Semiconductors written by David A. Drabold and published by Springer Science & Business Media. This book was released on 2007 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor science and technology is the art of defect engineering. The theoretical modeling of defects has improved dramatically over the past decade. These tools are now applied to a wide range of materials issues: quantum dots, buckyballs, spintronics, interfaces, amorphous systems, and many others. This volume presents a coherent and detailed description of the field, and brings together leaders in theoretical research. Today's state-of-the-art, as well as tomorrow’s tools, are discussed: the supercell-pseudopotential method, the GW formalism,Quantum Monte Carlo, learn-on-the-fly molecular dynamics, finite-temperature treatments, etc. A wealth of applications are included, from point defects to wafer bonding or the propagation of dislocation.

Author : W. Jantsch
Publisher : CRC Press
ISBN 13 : 1000112233
Total Pages : 164 pages
Book Rating : 4.38/5 ( download)

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Download or read book D(X) Centres and other Metastable Defects in Semiconductors, Proceedings of the INT Symposium, Mauterndorf, Austria, 18-22 February 1991 written by W. Jantsch and published by CRC Press. This book was released on 2020-11-25 with total page 164 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the first reports on metastable defects in III-V and II-VI compound semiconductors appeared in the late 1960s, the number of reports on defects with metastable states has been growing at an ever increasing rate. D(X)-center and other metastability defects cause many technical problems that are exacerbated by the uncertainty and controversy surrounding the mechanisms that cause them. A lively mix of theoretical and experimental discussions, D(X)-Centres and other Metastable Defects in Semiconductors presents a timely investigation of these systems. The book discusses topics such as, the validity of negative or positive U models, as well as alternative views that challenge existing ideas. The richness and precision of experimental data now emerging in the field is chronicled as are new investigative techniques. Based on an INT symposium, this book provides a successful forum where an extraordinary variety of ideas, including new perspectives, are examined critically.

Author : Masashi Suezawa
Publisher :
ISBN 13 :
Total Pages : 660 pages
Book Rating : 4.66/5 ( download)

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Download or read book Proceedings of the 18th International Conference on Defects in Semiconductors written by Masashi Suezawa and published by . This book was released on 1995 with total page 660 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Author : David Redfield
Publisher : Cambridge University Press
ISBN 13 : 0521461960
Total Pages : 231 pages
Book Rating : 4.62/5 ( download)

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Download or read book Photo-induced Defects in Semiconductors written by David Redfield and published by Cambridge University Press. This book was released on 1996-01-26 with total page 231 pages. Available in PDF, EPUB and Kindle. Book excerpt: A thorough review of the properties of deep-level, localized defects in semiconductors.

Author :
Publisher : Academic Press
ISBN 13 : 9780080864495
Total Pages : 434 pages
Book Rating : 4.9X/5 ( download)

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Download or read book Identification of Defects in Semiconductors written by and published by Academic Press. This book was released on 1998-10-27 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: GENERAL DESCRIPTION OF THE SERIES Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. GENERAL DESCRIPTION OF THE VOLUME This volume has contributions on Advanced Characterization Techniques with a focus on defect identification. The combination of beam techniques with electrical and optical characterization has not been discussed elsewhere.

Author : Matthew D. McCluskey
Publisher : CRC Press
ISBN 13 : 1439831521
Total Pages : 392 pages
Book Rating : 4.26/5 ( download)

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Download or read book Dopants and Defects in Semiconductors written by Matthew D. McCluskey and published by CRC Press. This book was released on 2012-02-23 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt: Dopants and Defects in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects in semiconductors. The book fills a crucial gap between solid-state physics and more specialized course texts. The authors first present introductory concepts, including basic semiconductor theory, defect classifications, crystal growth, and doping. They then explain electrical, vibrational, optical, and thermal properties. Moving on to characterization approaches, the text concludes with chapters on the measurement of electrical properties, optical spectroscopy, particle-beam methods, and microscopy. By treating dopants and defects in semiconductors as a unified subject, this book helps define the field and prepares students for work in technologically important areas. It provides students with a solid foundation in both experimental methods and the theory of defects in semiconductors.