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Author : Filip Tuomisto
Publisher :
ISBN 13 : 9781523127436
Total Pages : 578 pages
Book Rating : 4.30/5 ( download)
Download or read book Characterisation and Control of Defects in Semiconductors written by Filip Tuomisto and published by . This book was released on 2020 with total page 578 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Filip Tuomisto
Publisher : Materials, Circuits and Device
ISBN 13 : 1785616552
Total Pages : 601 pages
Book Rating : 4.56/5 ( download)
Download or read book Characterisation and Control of Defects in Semiconductors written by Filip Tuomisto and published by Materials, Circuits and Device. This book was released on 2019-10-27 with total page 601 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides an up-to-date review of the experimental and theoretical methods used for studying defects in semiconductors, this book focuses on recent developments driven by the requirements of new materials, including nitrides, oxide semiconductors and 2-D semiconductors.
Author : D. B. Holt
Publisher : Cambridge University Press
ISBN 13 : 1139463594
Total Pages : 625 pages
Book Rating : 4.91/5 ( download)
Download or read book Extended Defects in Semiconductors written by D. B. Holt and published by Cambridge University Press. This book was released on 2007-04-12 with total page 625 pages. Available in PDF, EPUB and Kindle. Book excerpt: A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Author :
Publisher : Academic Press
ISBN 13 : 0128019409
Total Pages : 458 pages
Book Rating : 4.05/5 ( download)
Download or read book Defects in Semiconductors written by and published by Academic Press. This book was released on 2015-06-08 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. Expert contributors Reviews of the most important recent literature Clear illustrations A broad view, including examination of defects in different semiconductors
Author : K. Sumino
Publisher : Elsevier
ISBN 13 : 0444600647
Total Pages : 817 pages
Book Rating : 4.46/5 ( download)
Download or read book Defect Control in Semiconductors written by K. Sumino and published by Elsevier. This book was released on 2012-12-02 with total page 817 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect control in semiconductors is a key technology for realizing the ultimate possibilities of modern electronics. The basis of such control lies in an integrated knowledge of a variety of defect properties. From this viewpoint, the volume discusses defect-related problems in connection with defect control in semiconducting materials, such as silicon, III-V, II-VI compounds, organic semiconductors, heterostructure, etc.The conference brought together scientists in the field of fundamental research and engineers involved in application related to electronic devices in order to promote future research activity in both fields and establish a fundamental knowledge of defect control. The main emphasis of the 254 papers presented in this volume is on the control of the concentration, distribution, structural and electronic states of any types of defects including impurities as well as control of the electrical, optical and other activities of defects. Due to the extensive length of the contents, only the number of papers presented per session is listed below.
Author : Giovanni Agostini
Publisher : Elsevier
ISBN 13 : 0080558151
Total Pages : 501 pages
Book Rating : 4.58/5 ( download)
Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Giovanni Agostini and published by Elsevier. This book was released on 2011-08-11 with total page 501 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures. Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field Each chapter starts with a didactic introduction on the technique The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors
Author : D. B. Holt
Publisher :
ISBN 13 : 9780511277511
Total Pages : 631 pages
Book Rating : 4.12/5 ( download)
Download or read book Extended Defects in Semiconductors written by D. B. Holt and published by . This book was released on 2007 with total page 631 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Dieter K. Schroder
Publisher : John Wiley & Sons
ISBN 13 : 0471739065
Total Pages : 800 pages
Book Rating : 4.67/5 ( download)
Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Author : S. Ashok
Publisher : Cambridge University Press
ISBN 13 : 9781107413634
Total Pages : 702 pages
Book Rating : 4.3X/5 ( download)
Download or read book Defect and Impurity Engineered Semiconductors II: written by S. Ashok and published by Cambridge University Press. This book was released on 2014-06-05 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt: The evolution of semiconductor devices of progressively higher performance has generally followed improved material quality with ever fewer defect concentrations. However, a shift in focus over the years has brought the realization that complete elimination of defects in semiconductors during growth and processing is neither desirable nor necessary. It is expected that the future role of defects in semiconductors will be one of control - in density, properties, spatial location, and perhaps even temporal variation during the operating lifetime of the device. This book explores the effective use of defect control at various facets of technology and widely different semiconductor materials systems. Topics include: grown-in defects in bulk crystals; doping issues; grown-in defects in thin films; doping and defect issues in wide-gap semiconductors; process-induced defects and gettering; defect properties, reactions, activation and passivation; ion implantation and irradiation effects; defects in devices and interfaces; plasma processing; defect characterization; and interfaces, quantum wells and superlattices.
Author : Ruaz Hussain Mari
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.35/5 ( download)
Download or read book DLTS Characterisation of Defects in III-V Compound Semiconductors Grown by MBE. written by Ruaz Hussain Mari and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The interest in the growth of III-V compound semiconductors such as GaAs and AIGaAs on high index planes has increased tremendously over the last few years. The structural, optical and electrical properties of III-V based structures are found to improve by growing on (n l l ) planes. For example the amphoteric nature of silicon (Si) facilitates the Molecular Beam Epitaxy (MBE) growth ofp-type GaAs/AIGaAs heterostructures on (3ll)A that have higher hole mobilities than those based on the conventional Be-doped p-type on (100) GaAs plane. The incorporation of intentional impurities, such as Si or Be in Ill-V semiconductors, have desirable effects in terms of controlling the electrical conductivity of the materials. However, other unintentionally incorporated impurities and defects have deleterious effects on the electrical and optical properties of Ill-V based devices. In this thesis, current-voltage-temperature (I-V- T), capacitance-voltage (C-V) Deep Level Transient Spectroscopy (DL TS) and Laplace DL TS techniques have been used to investigate defects in several MBE III - V epilayers and modulated structures grown both on the conventional (lOO) and non-(100) GaAs substrates. These include: (i) n-type silicon-doped (nll)B (n = 2-5) GaAs epitaxial layers; (ii) n-type silicon-doped (100) and (311)B GaAs/AIGaAs multi-quantum well (MQW); (iii) n-type silicon-doped (lOO) MQWs grown at different substrate temperatures, arsenic overpressures and arsenic species (As2 and As4); (iv) p-type Be-doped (100) and (3ll)A AIGaAs epitaxiallayers; (v) GaAs/ AIGaAs two dimensional electron gas (2DEG); (vi) commercially grown high electron mobility transistors (HEMT). The main findings of the experimental results are given in the following: (i) n-type silicon-doped (n11)B (n = 2-5) GaAs: the overall density of defects is highest in (211)B and lowest in (511 )B. The number of detected defects is minimum in (511)B. The common carbon background impurity in MBE is observed only in (l00) substrates. (ii) n-type silicon-doped (l00) and (311)B GaAs/AIGaAs MQWs: the concentration of the only trap is higher in (l00) than in (311)B orientation. Furthermore, in (l00) the observed trap electrically charged, while it has neutral nature in (311)B. (iii) n-type silicon-doped (l00) MQWs grown at different substrate temperatures, arsenic overpressures and arsenic species (As2 and As4): the average trap concentration for AS2 samples is lower than AS4 samples. In addition, the concentration of the common VAs-related point defect decreases with increasing growth temperature and arsenic overpressure. (iv) p-type Be-doped (l00) and (311)A AIGaAs: the number of hole traps in (311)A decreases from five to one when the Be-doping level varies from Ix 1016 cm-3 to IxlO17 cm-3. For (100) the detected hole levels are three, four and two for Be- concentrations of 1x1016 cm-3 , 3xlO16 cm-3 and 1xl017 cm-3, respectively. In addition, an electron emitting level is observed only in (l00) samples doped to 1x1017 cm-3. (v) GaAs/AIGaAs 2DEG and HEMT devices: one major defect, assigned to the DX center, is common in both in-house grown 2DEG and commercially HEMT devices. It behaves as a generation-recombination center, and its concentration is directly related to the silicon doping level in the AIGaAs layer. The HEMT devices which showed poor frequency response are found to have the highest concentration of the DX center.
