Carbon Containing Layers On Silicon

Author : H.J. Osten
Publisher : Trans Tech Publications Ltd
ISBN 13 : 3035705917
Total Pages : 88 pages
Book Rating : 4.11/5 ( download)

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Download or read book Carbon-Containing Layers on Silicon written by H.J. Osten and published by Trans Tech Publications Ltd. This book was released on 1999-07-07 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt: The addition of supersaturated carbon to silicon or silicon-germanium thin films leads to a new class of semiconducting materials. This new material can alleviate some of the constraints on strained Si1-xGex and may help to open up new fields of device applications for heteroepitaxial Si-based systems. Basic growth problems, as well as the mechanical and electrical properties of Si1-yCy and Si1-x-yGexCy layers grown pseudomorphically onto Si(001), have been reviewed. The incorporation of carbon can be used (i) to enhance SiGe layer properties, (ii) to obtain layers with new properties, or (iii) to control dopant diffusion in microelectronic devices. The phenomenon of suppressed boron diffusion in carbon-rich epitaxial layers can be used to increase the performance of SiGe heterojunction bipolar transistors (HBTs). When compared with SiGe technologies, the addition of carbon offers a significantly greater flexibility in process design and a greater latitude in processing margins.

Author :
Publisher : ScholarlyEditions
ISBN 13 : 1481683284
Total Pages : 903 pages
Book Rating : 4.89/5 ( download)

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Download or read book Advances in Molecular Nanotechnology Research and Application: 2013 Edition written by and published by ScholarlyEditions. This book was released on 2013-06-21 with total page 903 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Molecular Nanotechnology Research and Application: 2013 Edition is a ScholarlyEditions™ book that delivers timely, authoritative, and comprehensive information about Molecular Motors. The editors have built Advances in Molecular Nanotechnology Research and Application: 2013 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Molecular Motors in this book to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Advances in Molecular Nanotechnology Research and Application: 2013 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.

Author : M. Willander
Publisher : Elsevier
ISBN 13 : 008054102X
Total Pages : 325 pages
Book Rating : 4.20/5 ( download)

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Download or read book Silicon-Germanium Strained Layers and Heterostructures written by M. Willander and published by Elsevier. This book was released on 2003-10-02 with total page 325 pages. Available in PDF, EPUB and Kindle. Book excerpt: The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling. * Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review* The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject* Appropriate for students and senior researchers

Author : John D. Cressler
Publisher : CRC Press
ISBN 13 : 1420026585
Total Pages : 1248 pages
Book Rating : 4.80/5 ( download)

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Download or read book Silicon Heterostructure Handbook written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 1248 pages. Available in PDF, EPUB and Kindle. Book excerpt: An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source. Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snapshots" of the industrial state-of-the-art for devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each chapter contributed by expert authors from leading industrial and research institutions worldwide, the book is unequalled not only in breadth of scope, but also in depth of coverage, timeliness of results, and authority of references. It also includes a foreword by Dr. Bernard S. Meyerson, a pioneer in SiGe technology. Containing nearly 1000 figures along with valuable appendices, the Silicon Heterostructure Handbook authoritatively surveys materials, fabrication, device physics, transistor optimization, optoelectronics components, measurement, compact modeling, circuit design, and device simulation.

Author : C. K. Maiti
Publisher : IET
ISBN 13 : 9780852967782
Total Pages : 520 pages
Book Rating : 4.80/5 ( download)

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Download or read book Strained Silicon Heterostructures written by C. K. Maiti and published by IET. This book was released on 2001 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book comprehensively covers the areas of materials growth, characterisation and descriptions for the new devices in siliconheterostructure material systems. In recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical vapour deposition (UHVCVD) and other low temperature epitaxy techniques has given rise to a new area of research of bandgap engineering in silicon-based materials. This has paved the way not only for heterojunction bipolar and field effect transistors, but also for other fascinating novel quantum devices. This book provides an excellent introduction and valuable references for postgraduate students and research scientists.

Author : Jo Nijs
Publisher : CRC Press
ISBN 13 : 1000445062
Total Pages : 488 pages
Book Rating : 4.60/5 ( download)

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Download or read book Advanced Silicon & Semiconducting Silicon-Alloy Based Materials & Devices written by Jo Nijs and published by CRC Press. This book was released on 2021-05-30 with total page 488 pages. Available in PDF, EPUB and Kindle. Book excerpt: One of the first books to cover advanced silicon-based technologies, Advanced Silicon and Semiconducting Silicon Alloy-Based Materials and Devices presents important directions for research into silicon, its alloy-based semiconducting devices, and its development in commercial applications. The first section deals with single/mono crystalline silicon, focusing on the effects of heavy doping; the structure and electronic properties of defects and their impact on devices; the MBE of silicon, silicon alloys, and metals; CVD techniques for silicon and silicon germanium; the material properties of silicon germanium strained layers; silicon germanium heterojunction bipolar applications; FETs, IR detectors, and resonant tunneling devices in silicon, silicon germanium, and d-doped silicon; and the fascinating properties of crystalline silicon carbide and its applications. The second section explores polycrystalline silicon. It examines large grain polysilicon substrates for solar cells; the properties, analysis, and modeling of polysilicon TFTs; the technology of polysilicon TFTs in LCD displays; and the use of polycrystalline silicon and its alloys in VLSI applications. With contributors from leading academic and industrial research centers, this book provides wide coverage of fabrication techniques, material properties, and device applications.

Author : United States. Patent and Trademark Office
Publisher :
ISBN 13 :
Total Pages : 1404 pages
Book Rating : 4.19/5 ( download)

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Download or read book Official Gazette of the United States Patent and Trademark Office written by United States. Patent and Trademark Office and published by . This book was released on 2002 with total page 1404 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Author : Eberhard F. Krimmel
Publisher : Springer Science & Business Media
ISBN 13 : 3662099012
Total Pages : 417 pages
Book Rating : 4.18/5 ( download)

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Download or read book Si Silicon written by Eberhard F. Krimmel and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 417 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first of three Gmelin Handbook volumes in the silicon se ries that will cover silicon nitride, a normaUy solid material with the idealized formula Si N . This volume, 3 4 "Silicon" Supplement Volume B Sc, is devoted to applications of silicon nitride in microelec tronics and solar ceUs. The compendium is the product of a critical selection among more than 17600 publications on silicon nitride issued up to January 1990. Out of a total of 5900 publications dealing with the fabrication and use of microelectronic devices (including 2400 Japanese patent applications), about 4000 papers have been selected for this volume. The current volume is grouped into three parts. Chapters 2 to 8 deal with general, non specific microelectronic applications of silicon nitride, Chapters 9 to 31 cover applications of silicon nitride in specific devices and device components, and Chapter 32 is devoted exclusively to applications in solar ceUs, including information on our general understanding of the role of silicon nitride in photovoltaic devices. Experimental results on the preparation of silicon nitride layers for application in unspeci fied devices are in Chapter 2. Whenever the preparation is in connection with specific devices, the information is presented in the respective chapters. The general preparation of silicon nitride layers is not covered in this volume, but will appear in "Silicon" Supplement Volume B 5a. See also the Introductory Remarks, Chapter 1, p. 1.

Author : Sabu Thomas
Publisher : Elsevier
ISBN 13 : 012824254X
Total Pages : 391 pages
Book Rating : 4.44/5 ( download)

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Download or read book Silicon-Based Hybrid Nanoparticles written by Sabu Thomas and published by Elsevier. This book was released on 2021-09-24 with total page 391 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-Based Hybrid Nanoparticles: Fundamentals, Properties, and Applications focuses on the fundamental principles and promising applications of silicon-based hybrid nanoparticles in nanoelectronics, energy storage/conversion, catalysis, sensors, biomedicine, environment and imaging. This book is an important reference source for materials scientists and engineers who are seeking to understand more about the major properties and applications of silicon-based hybrid nanoparticles. As the hybridization of silicon nanoparticles with other semiconductors or metal oxides nanoparticles may exhibit superior features, when compared to lone, individual nanoparticles, this book provides the latest insights. In addition, the silicon/iron oxide hybrid nanoparticles also possess excellent fluorescence, super-paramagnetism, and biocompatibility that can be effectively used for the diagnostic imaging system in vivo. Similarly, gold-silicon nanohybrids could be used as highly efficient near-infrared hyperthermia agents for cancer cell destruction. Outlines the major thermal, electrical, optical, magnetic and toxic properties of silicon-based hybrid nanoparticles Describes major applications in energy, environmental science and catalysis Assesses the major challenges to manufacturing silicon-based nanostructured materials on an industrial scale

Author : John D. Cressler
Publisher : CRC Press
ISBN 13 : 1420066862
Total Pages : 264 pages
Book Rating : 4.69/5 ( download)

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Download or read book SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2017-12-19 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.