Applications Of Finite Element Methods For Reliability Studies On Ulsi Interconnections

Author : Cher Ming Tan
Publisher : Springer Science & Business Media
ISBN 13 : 0857293109
Total Pages : 154 pages
Book Rating : 4.07/5 ( download)

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Download or read book Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections written by Cher Ming Tan and published by Springer Science & Business Media. This book was released on 2011-03-28 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt: Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections provides a detailed description of the application of finite element methods (FEMs) to the study of ULSI interconnect reliability. Over the past two decades the application of FEMs has become widespread and continues to lead to a much better understanding of reliability physics. To help readers cope with the increasing sophistication of FEMs’ applications to interconnect reliability, Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections will: introduce the principle of FEMs; review numerical modeling of ULSI interconnect reliability; describe the physical mechanism of ULSI interconnect reliability encountered in the electronics industry; and discuss in detail the use of FEMs to understand and improve ULSI interconnect reliability from both the physical and practical perspective, incorporating the Monte Carlo method. A full-scale review of the numerical modeling methodology used in the study of interconnect reliability highlights useful and noteworthy techniques that have been developed recently. Many illustrations are used throughout the book to improve the reader’s understanding of the methodology and its verification. Actual experimental results and micrographs on ULSI interconnects are also included. Applications of Finite Element Methods for Reliability Studies on ULSI Interconnections is a good reference for researchers who are working on interconnect reliability modeling, as well as for those who want to know more about FEMs for reliability applications. It gives readers a thorough understanding of the applications of FEM to reliability modeling and an appreciation of the strengths and weaknesses of various numerical models for interconnect reliability.

Author : Cher Ming Tan
Publisher : World Scientific
ISBN 13 : 9814273325
Total Pages : 312 pages
Book Rating : 4.29/5 ( download)

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Download or read book Electromigration in ULSI Interconnections written by Cher Ming Tan and published by World Scientific. This book was released on 2010 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed.

Author : Cher-Ming Tan
Publisher : CRC Press
ISBN 13 : 1000470687
Total Pages : 121 pages
Book Rating : 4.80/5 ( download)

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Download or read book Graphene and VLSI Interconnects written by Cher-Ming Tan and published by CRC Press. This book was released on 2021-11-24 with total page 121 pages. Available in PDF, EPUB and Kindle. Book excerpt: Copper (Cu) has been used as an interconnection material in the semiconductor industry for years owing to its best balance of conductivity and performance. However, it is running out of steam as it is approaching its limits with respect to electrical performance and reliability. Graphene is a non-metal material, but it can help to improve electromigration (EM) performance of Cu because of its excellent properties. Combining graphene with Cu for very large-scale integration (VLSI) interconnects can be a viable solution. The incorporation of graphene into Cu allows the present Cu fabrication back-end process to remain unaltered, except for the small step of “inserting” graphene into Cu. Therefore, it has a great potential to revolutionize the VLSI integrated circuit (VLSI-IC) industry and appeal for further advancement of the semiconductor industry. This book is a compilation of comprehensive studies done on the properties of graphene and its synthesis methods suitable for applications of VLSI interconnects. It introduces the development of a new method to synthesize graphene, wherein it not only discusses the method to grow graphene over Cu but also allows the reader to know how to optimize graphene growth, using statistical design of experiments (DoE), on Cu interconnects in order to obtain good-quality and reliable interconnects. It provides a basic understanding of graphene–Cu interaction mechanism and evaluates the electrical and EM performance of graphenated Cu interconnects.

Author : Cher Ming Tan
Publisher : Springer Science & Business Media
ISBN 13 : 9814451215
Total Pages : 111 pages
Book Rating : 4.15/5 ( download)

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Download or read book Electromigration Modeling at Circuit Layout Level written by Cher Ming Tan and published by Springer Science & Business Media. This book was released on 2013-03-16 with total page 111 pages. Available in PDF, EPUB and Kindle. Book excerpt: Integrated circuit (IC) reliability is of increasing concern in present-day IC technology where the interconnect failures significantly increases the failure rate for ICs with decreasing interconnect dimension and increasing number of interconnect levels. Electromigration (EM) of interconnects has now become the dominant failure mechanism that determines the circuit reliability. This brief addresses the readers to the necessity of 3D real circuit modelling in order to evaluate the EM of interconnect system in ICs, and how they can create such models for their own applications. A 3-dimensional (3D) electro-thermo-structural model as opposed to the conventional current density based 2-dimensional (2D) models is presented at circuit-layout level.

Author : Tomáš Březina
Publisher : Springer Science & Business Media
ISBN 13 : 3319022946
Total Pages : 902 pages
Book Rating : 4.49/5 ( download)

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Download or read book Mechatronics 2013 written by Tomáš Březina and published by Springer Science & Business Media. This book was released on 2013-09-12 with total page 902 pages. Available in PDF, EPUB and Kindle. Book excerpt: Mechatronics, as the integrating framework of mechanical engineering, electrical engineering, computer technology, control engineering and automation forms a crucial part in the design, manufacture and maintenance of a wide range of engineering products and processes. The mechatronics itself changes rapidly in last decade, from original mixture of subfields into original approach in engineering as a technical discipline. The book you are holding is aimed to help the reader to orient in this evolving field of science and technology. "Mechatronics 2013: Recent Technological and Scientific Advances" is the fourth volume following the previous editions in 2007, 2009 and 2011, providing the comprehensive and accessible coverage of advances in mechatronics presented on the 10th International Conference Mechatronics 2013, hosted this year at the Brno University of Technology, Czech Republic. The contributions, that passed the thorough review process, give an insight into current trends in research and development among Mechatronics 2013 contributing countries, with paper topics covering design and modeling of mechatronic systems, control and automation, signal processing, robotics and others, keeping in mind the innovation benefits of mechatronics design approach, leading to the development, production and daily use of machines and devices possessing a certain degree of computer based intelligence.

Author : Cher Ming Tan
Publisher : World Scientific
ISBN 13 : 9814273333
Total Pages : 312 pages
Book Rating : 4.36/5 ( download)

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Download or read book Electromigration in ULSI Interconnections written by Cher Ming Tan and published by World Scientific. This book was released on 2010 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electromigration in ULSI Interconnections provides a comprehensive description of the electro migration in integrated circuits. It is intended for both beginner and advanced readers on electro migration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electro migration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electro migration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electro migration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electro migration are presented in a concise and rigorous manner.Methods of numerical modeling for the interconnect electro migration and their applications to the understanding of electro migration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electro migration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electro migration are outlined and discussed.

Author :
Publisher :
ISBN 13 : 9814467936
Total Pages : pages
Book Rating : 4.33/5 ( download)

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Download or read book Electromigration in ULSI Interconnections written by and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Author : Zhenghao Gan
Publisher : McGraw Hill Professional
ISBN 13 : 007175427X
Total Pages : 624 pages
Book Rating : 4.79/5 ( download)

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Download or read book Semiconductor Process Reliability in Practice written by Zhenghao Gan and published by McGraw Hill Professional. This book was released on 2012-10-10 with total page 624 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proven processes for ensuring semiconductor device reliability Co-written by experts in the field, Semiconductor Process Reliability in Practice contains detailed descriptions and analyses of reliability and qualification for semiconductor device manufacturing and discusses the underlying physics and theory. The book covers initial specification definition, test structure design, analysis of test structure data, and final qualification of the process. Real-world examples of test structure designs to qualify front-end-of-line devices and back-end-of-line interconnects are provided in this practical, comprehensive guide. Coverage includes: Basic device physics Process flow for MOS manufacturing Measurements useful for device reliability characterization Hot carrier injection Gate-oxide integrity (GOI) and time-dependent dielectric breakdown (TDDB) Negative bias temperature instability Plasma-induced damage Electrostatic discharge protection of integrated circuits Electromigration Stress migration Intermetal dielectric breakdown

Author : Farzad Ebrahimi
Publisher : BoD – Books on Demand
ISBN 13 : 9535107690
Total Pages : 414 pages
Book Rating : 4.99/5 ( download)

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Download or read book Finite Element Analysis written by Farzad Ebrahimi and published by BoD – Books on Demand. This book was released on 2012-10-10 with total page 414 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the past few decades, the Finite Element Method (FEM) has been developed into a key indispensable technology in the modeling and simulation of various engineering systems. The present book reports on the state of the art research and development findings on this very broad matter through original and innovative research studies exhibiting various investigation directions of FEM in electrical, civil, materials and biomedical engineering. This book is a result of contributions of experts from international scientific community working in different aspects of FEM. The text is addressed not only to researchers, but also to professional engineers, students and other experts in a variety of disciplines, both academic and industrial seeking to gain a better understanding of what has been done in the field recently, and what kind of open problems are in this area.

Author : Achintya Haldar
Publisher : John Wiley & Sons
ISBN 13 : 9780471369615
Total Pages : 356 pages
Book Rating : 4.16/5 ( download)

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Download or read book Reliability Assessment Using Stochastic Finite Element Analysis written by Achintya Haldar and published by John Wiley & Sons. This book was released on 2000-05-22 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first complete guide to using the Stochastic Finite Element Method for reliability assessment Unlike other analytical reliability estimation techniques, the Stochastic Finite Element Method (SFEM) can be used for both implicit and explicit performance functions, making it a particularly powerful and robust tool for today's engineer. This book, written by two pioneers in SFEM-based methodologies, shows how to use SFEM for the reliability analysis of a wide range of structures. It begins by reviewing essential risk concepts, currently available risk evaluation procedures, and the use of analytical and sampling methods in estimating risk. Next, it introduces SFEM evaluation procedures, with detailed coverage of displacement-based and stress-based deterministic finite element approaches. Linear, nonlinear, static, and dynamic problems are considered separately to demonstrate the robustness of the methods. The risk or reliability estimation procedure for each case is presented in different chapters, with theory complemented by a useful series of examples. Integrating advanced concepts in risk-based design, finite elements, and mechanics, Reliability Assessment Using Stochastic Finite Element Analysis is vital reading for engineering professionals and students in all areas of the field.