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Author : Cary Y Yang
Publisher :
ISBN 13 : 9783642848056
Total Pages : 448 pages
Book Rating : 4.52/5 ( download)
Download or read book Amorphous and Crystalline Silicon Carbide IV written by Cary Y Yang and published by . This book was released on 1992-12-10 with total page 448 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Cary Y. Yang
Publisher : Springer Science & Business Media
ISBN 13 : 3642848044
Total Pages : 439 pages
Book Rating : 4.49/5 ( download)
Download or read book Amorphous and Crystalline Silicon Carbide IV written by Cary Y. Yang and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 439 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide and other group IV-IV materials in their amorphous, microcrystalline, and crystalline forms have a wide variety of applications.The contributions to this volume report recent developments and trends in the field. The purpose is to make available the current state of understanding of the materials and their potential applications. Eachcontribution focuses on a particular topic, such as preparation methods, characterization, and models explaining experimental findings. The volume also contains the latest results in the exciting field of SiGe/Si heterojunction bipolar transistors. The reader will find this book valuable as a reference source, an up-to-date and in-depth overview of this field, and, most importantly, as a window into the immense range of reading potential applications of silicon carbide. It is essential for scientists, engineers and students interested in electronic materials, high-speed heterojunction devices, and high-temperature optoelectronics.
Author : Gary L. Harris
Publisher : Springer
ISBN 13 : 9783642844027
Total Pages : 0 pages
Book Rating : 4.22/5 ( download)
Download or read book Amorphous and Crystalline Silicon Carbide III written by Gary L. Harris and published by Springer. This book was released on 1992 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains written versions of the papers presented at the Third Inter national Conference on Amorphous and Crystalline Silicon Carbide and Other Group IV-IV Materials (lCACSC 90), which was held at Howard University, April 11-13, 1990 in Washington, DC. The ICACSC continued to provide an international forum for discussion and exchange of ideas regarding the current state of research aimed at developing silicon carbide devices and circuits and related materials. ICACSC attracted over one hundred participants from seven countries. A special session was held in honor of the eight Soviet scientists who attended the conference. The substantial increase in the number of papers compared with the previous year is an indication of the growing interest in this field. The conference also included a poster session for the first time. This volume contains 54 refereed contributions grouped into four parts. Several exciting new results are reported for the first time here: SiC-based solid-solution growth and technology, the formation of SiGe heterostructures by ion implantation, 6H-SiC substrates grown by the sublimation method, expla nation of the appearance of negative differential resistance in a N+PN-SiC-6H transistor by the Wannier-Starck effect, the formation of amorphous SiC/Si het erojunctions by the polymer route, and the prospects of developing SiC bipolar transistors and thyristors.
Author : Gary Lynn Harris
Publisher : Springer
ISBN 13 :
Total Pages : 392 pages
Book Rating : 4.23/5 ( download)
Download or read book Amorphous and Crystalline Silicon Carbide III and Other Group IV-IV Materials written by Gary Lynn Harris and published by Springer. This book was released on 1992 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Gary L. Harris
Publisher : Springer
ISBN 13 :
Total Pages : 220 pages
Book Rating : 4.30/5 ( download)
Download or read book Amorphous and Crystalline Silicon Carbide and Related Materials written by Gary L. Harris and published by Springer. This book was released on 1989-03-08 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt: Although silicon carbide has been used for more than half a century, its potential as a high-temperature, corrosion-resistant semiconductor has only recently begun to be exploited. Both crystalline and amorphous forms of SiC offer several advantages over Si, GaAs, and InP for high-frequency, high-power, and high-speed circuits. This volume contains reports on high-temperature SiC MOSFETs and MESFETs, secondary harmonic generation in SiC, a-SiC emitter heterojunction bipolar transistors, and bulk crystal growth of 6H-SiC. For newcomers to the field it provides an up-to-date review of technological developments in SiC and related materials, while specialists will find here recent references and new insights into materials for high-temperature, high-power, and high-speed circuit applications.
Author : Mahmud M. Rahman
Publisher : Springer Science & Business Media
ISBN 13 : 3642750486
Total Pages : 238 pages
Book Rating : 4.89/5 ( download)
Download or read book Amorphous and Crystalline Silicon Carbide II written by Mahmud M. Rahman and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains written versions of the papers presented at the Second Inter national Conference on Amorphous and Crystalline Silicon Carbide and Related Materials (ICACSC 1988), which was held at Santa Clara University on Decem ber 15 and 16, 1988. The conference followed the First ICACSC held at Howard University, Washington DC, in December 1987 and continued to provide an in ternational forum for discussion and exchange of ideas and results covering the current status of research on SiC and related materials. ICACSC 1988 attracted 105 participants from five countries. The substantial increase in the number of papers compared with the previous year is an indication of the growing interest in this field. Of the 45 papers presented at the conference, 36 refereed manuscripts are included in this volume, while the remaining 9 appear as abstracts. The six invited papers provide detailed reviews of recent results on amorphous and crystalline silicon carbide materials and devices, as well as diamond thin films. The volume is divided into six parts, each covering an important theme of the conference.
Author : Gary Lynn Harris
Publisher : Springer
ISBN 13 : 9783540536031
Total Pages : 372 pages
Book Rating : 4.35/5 ( download)
Download or read book Amorphous and Crystalline Silicon Carbide III and Other Group IV-IV Materials written by Gary Lynn Harris and published by Springer. This book was released on 1992-01-01 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Papers presented at the Third International Conference on Amorphous and Crystalline Silicon Carbide and Other Group IV-IV Materials (ICACSC 90)"--Pref.
Author :
Publisher : Academic Press
ISBN 13 : 9780080864501
Total Pages : 420 pages
Book Rating : 4.03/5 ( download)
Download or read book SiC Materials and Devices written by and published by Academic Press. This book was released on 1998-07-02 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume addresses the subject of materials science, specifically the materials aspects, device applications, and fabricating technology of SiC.
Author : Wolfgang J. Choyke
Publisher : Springer Science & Business Media
ISBN 13 : 3642188702
Total Pages : 911 pages
Book Rating : 4.01/5 ( download)
Download or read book Silicon Carbide written by Wolfgang J. Choyke and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 911 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.
Author : C.G. Van de Walle
Publisher : Elsevier
ISBN 13 : 0444599177
Total Pages : 635 pages
Book Rating : 4.79/5 ( download)
Download or read book Wide-band-gap Semiconductors written by C.G. Van de Walle and published by Elsevier. This book was released on 2012-12-02 with total page 635 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide-band-gap semiconductors have been a research topic for many decades. However, it is only in recent years that the promise for technological applications came to be realized; simultaneously an upsurge of experimental and theoretical activity in the field has been witnessed. Semiconductors with wide band gaps exhibit unique electronic and optical properties. Their low intrinsic carrier concentrations and high breakdown voltage allow high-temperature and high-power applications (diamond, SiC etc.). The short wavelength of band-to-band transitions allows emission in the green, blue, or even UV region of the spectrum (ZnSe, GaN, etc.). In addition, many of these materials have favorable mechanical and thermal characteristics. These proceedings reflect the exciting progress made in this field. Successful p-type doping of ZnSe has recently led to the fabrication of blue-green injection lasers in ZnSe; applications of short-wavelength light-emitting devices range from color displays to optical storage. In SiC, advances in growth techniques for bulk as well as epitaxial material have made the commercial production of high-temperature and high-frequency devices possible. For GaN, refinement of growth procedures and new ways of obtaining doped material have resulted in blue-light-emitting diodes and opened the road to the development of laser diodes. Finally, while the quality of artificial diamond is not yet high enough for electronic applications, the promise it holds in terms of unique material properties is encouraging intense activity in the field. This volume contains contributions from recognized experts presently working on different material systems in the field. The papers cover the theoretical, experimental and application-oriented aspects of this exciting topic.
