Advanced Gate Stack Source Drain And Channel Engineering For Si Based Cmos 4 New Materials Processes And Equipment

Author : P. J. Timans
Publisher : The Electrochemical Society
ISBN 13 : 1566776260
Total Pages : 488 pages
Book Rating : 4.64/5 ( download)

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Download or read book Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment written by P. J. Timans and published by The Electrochemical Society. This book was released on 2008-05 with total page 488 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.

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ISBN 13 :
Total Pages : pages
Book Rating : 4.39/5 ( download)

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Download or read book Généalogie de la maison de Nettancourt, comtes de Vaubecourt, ... en Champagne. Produite ... au mois de mars 1668 written by and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

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Publisher :
ISBN 13 :
Total Pages : 658 pages
Book Rating : 4.33/5 ( download)

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Download or read book Advanced Gate Stack, Source/drain and Channel Engineering for Si-based CMOS written by and published by . This book was released on 2005 with total page 658 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Author : Fred Roozeboom
Publisher : The Electrochemical Society
ISBN 13 : 1566775027
Total Pages : 472 pages
Book Rating : 4.21/5 ( download)

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Download or read book Advanced Gate Stack, Source/drain, and Channel Engineering for Si-based CMOS 2 written by Fred Roozeboom and published by The Electrochemical Society. This book was released on 2006 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: These proceedings describe processing, materials, and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.

Author : E. P. Gusev
Publisher : The Electrochemical Society
ISBN 13 : 1566777917
Total Pages : 426 pages
Book Rating : 4.19/5 ( download)

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Download or read book Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment written by E. P. Gusev and published by The Electrochemical Society. This book was released on 2010-04 with total page 426 pages. Available in PDF, EPUB and Kindle. Book excerpt: These proceedings describe processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.

Author : V. Narayanan
Publisher : The Electrochemical Society
ISBN 13 : 1566777097
Total Pages : 367 pages
Book Rating : 4.94/5 ( download)

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Download or read book Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 5: New Materials, Processes, and Equipment written by V. Narayanan and published by The Electrochemical Society. This book was released on 2009-05 with total page 367 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ¿ECS Transactions¿ describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics include strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.

Author : Yannick Le Tiec
Publisher : John Wiley & Sons
ISBN 13 : 1118578120
Total Pages : 261 pages
Book Rating : 4.24/5 ( download)

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Download or read book Chemistry in Microelectronics written by Yannick Le Tiec and published by John Wiley & Sons. This book was released on 2013-02-28 with total page 261 pages. Available in PDF, EPUB and Kindle. Book excerpt: Microelectronics is a complex world where many sciences need to collaborate to create nano-objects: we need expertise in electronics, microelectronics, physics, optics and mechanics also crossing into chemistry, electrochemistry, as well as biology, biochemistry and medicine. Chemistry is involved in many fields from materials, chemicals, gases, liquids or salts, the basics of reactions and equilibrium, to the optimized cleaning of surfaces and selective etching of specific layers. In addition, over recent decades, the size of the transistors has been drastically reduced while the functionality of circuits has increased. This book consists of five chapters covering the chemicals and sequences used in processing, from cleaning to etching, the role and impact of their purity, along with the materials used in “Front End Of the Line” which corresponds to the heart and performance of individual transistors, then moving on to the “Back End Of the Line” which is related to the interconnection of all the transistors. Finally, the need for specific functionalization also requires key knowledge on surface treatments and chemical management to allow new applications. Contents 1. Chemistry in the “Front End of the Line” (FEOL): Deposits, Gate Stacks, Epitaxy and Contacts, François Martin, Jean-Michel Hartmann, Véronique Carron and Yannick Le Tiec. 2. Chemistry in Interconnects, Vincent Jousseaume, Paul-Henri Haumesser, Carole Pernel, Jeffery Butterbaugh, Sylvain Maîtrejean and Didier Louis. 3. The Chemistry of Wet Surface Preparation: Cleaning, Etching and Drying, Yannick Le Tiec and Martin Knotter. 4. The Use and Management of Chemical Fluids in Microelectronics, Christiane Gottschalk, Kevin Mclaughlin, Julie Cren, Catherine Peyne and Patrick Valenti. 5. Surface Functionalization for Micro- and Nanosystems: Application to Biosensors, Antoine Hoang, Gilles Marchand, Guillaume Nonglaton, Isabelle Texier-Nogues and Francoise Vinet. About the Authors Yannick Le Tiec is a technical expert at CEA-Leti, Minatec since 2002. He is a CEA-Leti assignee at IBM, Albany (NY) to develop the advanced 14 nm CMOS node and the FDSOI technology. He held different technical positions from the advanced 300 mm SOI CMOS pilot line to different assignments within SOITEC for advanced wafer development and later within INES to optimize solar cell ramp-up and yield. He has been part of the ITRS Front End technical working group at ITRS since 2008.

Author : Samares Kar
Publisher : The Electrochemical Society
ISBN 13 : 1566775035
Total Pages : 565 pages
Book Rating : 4.38/5 ( download)

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Download or read book Physics and Technology of High-k Gate Dielectrics 4 written by Samares Kar and published by The Electrochemical Society. This book was released on 2006 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue covers, in detail, all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.

Author : LE TIEC Yannick
Publisher : Lavoisier
ISBN 13 : 2746289180
Total Pages : 386 pages
Book Rating : 4.85/5 ( download)

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Download or read book Chimie en microélectronique written by LE TIEC Yannick and published by Lavoisier. This book was released on 2013-07-01 with total page 386 pages. Available in PDF, EPUB and Kindle. Book excerpt: La microélectronique est un monde complexe dans lequel plusieurs sciences comme la physique, l’électronique, l’optique ou la mécanique, contribuent à créer des nano-objets fonctionnels. La chimie est particulièrement impliquée dans de nombreux domaines tels que la synthèse des matériaux, la pureté des fluides, des gaz, des sels, le suivi des réactions chimiques et de leurs équilibres ainsi que la préparation de surfaces optimisées et la gravure sélective de couches spécifiques. Au cours des dernières décennies, la taille des transistors s’est considérablement réduite et la fonctionnalité des circuits électroniques s’est accrue. Cette évolution a conduit à une interpénétration de la chimie et de la microélectronique exposée dans cet ouvrage. Chimie en microélectronique présente les chimies et les séquences utilisées lors des procédés de production de la microélectronique, des nettoyages jusqu’aux gravures des plaquettes de silicium, du rôle et de l’impact de leur niveau de pureté jusqu’aux procédés d’interconnexion des millions de transistors composant un circuit électronique. Afin d’illustrer la convergence avec le domaine de la santé, l’ouvrage expose les nouvelles fonctionnalisations spécifiques, tels que les capteurs biologiques ou les capteurs sur la personne.

Author : Evgeni Gusev
Publisher : Springer Science & Business Media
ISBN 13 : 9781402043659
Total Pages : 516 pages
Book Rating : 4.51/5 ( download)

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Download or read book Defects in HIgh-k Gate Dielectric Stacks written by Evgeni Gusev and published by Springer Science & Business Media. This book was released on 2006-01-27 with total page 516 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main goal of this book is to review at the nano and atomic scale the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. One of the key obstacles to integrate this novel class of materials into Si nano-technology are the electronic defects in high-k dielectrics. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. The unique feature of this book is a special focus on the important issue of defects. The subject is covered from various angles, including silicon technology, processing aspects, materials properties, electrical defects, microstructural studies, and theory. The authors who have contributed to the book represents a diverse group of leading scientists from academic, industrial and governmental labs worldwide who bring a broad array of backgrounds (basic and applied physics, chemistry, electrical engineering, surface science, and materials science). The contributions to this book are accessible to both expert scientists and engineers who need to keep up with leading edge research, and newcomers to the field who wish to learn more about the exciting basic and applied research issues relevant to next generation device technology.